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    03 TRANSISTOR Search Results

    03 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    03 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: STP100NF03L-03 STB100NF03L-03 STB100NF03L-03-1 N-channel 30V - 0.0026Ω - 100A - D2PAK/I2/TO-220 STripFET III Power MOSFET General features Type VDSS RDS on ID STB100NF03L-03 30V <0.0032Ω 100A STB100NF03L-03-1 30V <0.0032Ω 100A STP100NF03L-03 30V


    Original     		PDF STP100NF03L-03 STB100NF03L-03 STB100NF03L-03-1 D2PAK/I2/TO-220 STB100NF03L-03 O-220

    p100NF

    Abstract: B100NF03L B100NF STB100NF03L-03T4 JESD97 STB100NF03L-03 STB100NF03L-03-1 STP100NF03L-03 P100NF03L ISD 1720
    Text: STP100NF03L-03 STB100NF03L-03 STB100NF03L-03-1 N-channel 30V - 0.0026Ω - 100A - D2PAK/I2/TO-220 STripFET III Power MOSFET General features Type VDSS RDS on ID STB100NF03L-03 30V <0.0032Ω 100A STB100NF03L-03-1 30V <0.0032Ω 100A STP100NF03L-03 30V


    Original     		PDF STP100NF03L-03 STB100NF03L-03 STB100NF03L-03-1 D2PAK/I2/TO-220 STB100NF03L-03 O-220 p100NF B100NF03L B100NF STB100NF03L-03T4 JESD97 STB100NF03L-03-1 STP100NF03L-03 P100NF03L ISD 1720

    STB100NF03L-03

    Abstract: STB100NF03L-03-01 STB100NF03L-03-1 STP100NF03L-03
    Text: STB100NF03L-03 STP100NF03L-03 STB100NF03L-03-1 N-CHANNEL 30V - 0.0026 Ω -100A D²PAK/I²PAK/TO-220 STripFET II POWER MOSFET • ■ ■ ■ ■ ■ TYPE VDSS RDS on ID STB100NF03L-03 STP100NF03L-03 STB100NF03L-03-01 30 V 30 V 30 V <0.0032 Ω <0.0032 Ω


    Original     		PDF STB100NF03L-03 STP100NF03L-03 STB100NF03L-03-1 -100A PAK/TO-220 STB100NF03L-03 STB100NF03L-03-01 O-251) O-263) STB100NF03L-03-01 STB100NF03L-03-1 STP100NF03L-03

    Q67042-S4057

    Abstract: SPB100N03S2-03 SPI100N03S2-03 SPP100N03S2-03 PN0303
    Text: Preliminary data SPI100N03S2-03 SPP100N03S2-03,SPB100N03S2-03 OptiMOSâ Power-Transistor Feature Product Summary • N-Channel VDS • Enhancement mode RDS on • 175°C operating temperature ID • Avalanche rated P-TO262-3-1 max. SMD version 30 V 3 mΩ


    Original     		PDF SPI100N03S2-03 SPP100N03S2-03 SPB100N03S2-03 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP100N03S2-03 Q67042-S4058 PN0303 Q67042-S4057 SPB100N03S2-03 SPI100N03S2-03 PN0303

    Q67042-S4057

    Abstract: ANPS071E SPB100N03S2-03 SPI100N03S2-03 SPP100N03S2-03 PN0303 Q67042-S4058
    Text: SPI100N03S2-03 SPP100N03S2-03,SPB100N03S2-03 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 30 V • Enhancement mode RDS on max. SMD version 3 mΩ • Excellent Gate Charge x RDS(on) product (FOM) ID • Superior thermal resistance


    Original     		PDF SPI100N03S2-03 SPP100N03S2-03 SPB100N03S2-03 SPP100N03S2-03 Q67042-S4058 Q67042-S4057 PN0303 Q67042-S4116 Q67042-S4057 ANPS071E SPB100N03S2-03 SPI100N03S2-03 PN0303 Q67042-S4058

    A1502

    Abstract: smd diode code GS Q67065-A7009 SMD CODE G13
    Text: Preliminary Data Sheet IPB100N06S3L-03 IPI100N06S3L-03, IPP100N06S3L-03 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 2.7 mΩ ID


    Original     		PDF IPB100N06S3L-03 IPI100N06S3L-03, IPP100N06S3L-03 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPB100N06S3L-03 IPI100N06S3L-03 PG-TO263-3-2 A1502 smd diode code GS Q67065-A7009 SMD CODE G13

    32768 quartz

    Abstract: CoolRISC 816 d flip flop using gdi techniques XE8000 TQFP32 TQFP44 TQFP64 XE88LC01 XE88LC03 XE88LC05
    Text: XEMICS Data Book XX-XE88LC01/03/05 Ultra low-power mixed-signal microcontroller 300 uA at 1 MIPS 16 + 6 bits ADC 20001101 Preliminary information XX-XE88LC01/03/05, Data Book Copyright XEMICS Printed in Switzerland Date of release 03-00 03-00-0035 - Data book XX-XE88LC01-03-05


    Original     		PDF XX-XE88LC01/03/05 XX-XE88LC01/03/05, XX-XE88LC01-03-05 XE8000 32768 quartz CoolRISC 816 d flip flop using gdi techniques TQFP32 TQFP44 TQFP64 XE88LC01 XE88LC03 XE88LC05

    CF001-03

    Abstract: CFA0103A low noise x band hemt transistor cfb0103 CFB0103-B CFB0103B CFS0103-SB CFA0103-A Mimix Broadband CF001
    Text: GaAs Pseudomorphic HEMT Transistor April 2008 - Rev 03-Apr-08 CF001-03 Features High Gain: Usable to 44 GHz Low Noise Figure 0.8 dB @ 12 GHz Wafer Qualification Procedure Customer Wafer Selection Available General Description Mimix CF001-03 GaAs-based transistor is a 300 um gate


    Original     		PDF 03-Apr-08 CF001-03 CF001-03 MIL-STD-750 CF001-03-000X CFA0103A low noise x band hemt transistor cfb0103 CFB0103-B CFB0103B CFS0103-SB CFA0103-A Mimix Broadband CF001

    2n0303

    Abstract: INFINEON PART MARKING SPB80N03S2-03 smd diode 2420 SMD MARKING CODE transistor SMD TRANSISTOR MARKING code TC transistor vds rds 12 id 80a to220 ANPS071E SPI80N03S2-03 SPP80N03S2-03
    Text: SPI80N03S2-03 SPP80N03S2-03,SPB80N03S2-03 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 30 V • Enhancement mode RDS on max. SMD version 3.1 mΩ • Excellent Gate Charge x RDS(on) product (FOM) ID 80 A • Superior thermal resistance


    Original     		PDF SPI80N03S2-03 SPP80N03S2-03 SPB80N03S2-03 SPP80N03S2-03 Q67040-S4247 Q67040-S4258 2N0303 Q67042-S4079 2n0303 INFINEON PART MARKING SPB80N03S2-03 smd diode 2420 SMD MARKING CODE transistor SMD TRANSISTOR MARKING code TC transistor vds rds 12 id 80a to220 ANPS071E SPI80N03S2-03

    3PN0603

    Abstract: INFINEON smd PART MARKING ANPS071E BIPP100N06S3-03 IPB100N06S3-03 IPI100N06S3-03 IPP100N06S3-03
    Text: Target data sheet IPI100N06S3-03 IPP100N06S3-03,IPB100N06S3-03 OptiMOS-T Power-Transistor Product Summary Feature VDS • n-Channel RDS on • Enhancement mode ID • AEC Q101 qualified • Low On-Resistance RDS(on) max. SMD version P- TO262 -3-1 55 V


    Original     		PDF IPI100N06S3-03 IPP100N06S3-03 IPB100N06S3-03 IPP100N06S3-03 3PN0603 BIPP100N06S3-03, 3PN0603 INFINEON smd PART MARKING ANPS071E BIPP100N06S3-03 IPB100N06S3-03 IPI100N06S3-03

    Q67042-S4057

    Abstract: No abstract text available
    Text: SPI100N03S2-03 SPP100N03S2-03,SPB100N03S2-03 OptiMOS =Power-Transistor Product Summary Feature 30 VDS  N-Channel RDS on  Enhancement mode ID  Excellent Gate Charge x RDS(on) product (FOM) Superior thermal resistance max. SMD version P- TO262 -3-1 V m


    Original     		PDF SPI100N03S2-03 SPP100N03S2-03 SPB100N03S2-03 SPB100N03S2-03 Q67042-S4058 Q67042-S4057 Q67042-S4116 PN0303

    3pn06l03

    Abstract: ANPS071E smd diode marking 78A 3pn06 INFINEON PART MARKING to263 K TRANSISTOR SMD MARKING CODE INFINEON smd PART MARKING OPTIMOS TRANSISTOR BIPP100N06S3L-03 INFINEON PART MARKING
    Text: Target data sheet IPI100N06S3L-03 IPP100N06S3L-03,IPB100N06S3L-03 OptiMOS-T Power-Transistor Feature • n-Channel • Enhancement mode • Logic Level • AEC Q101 qualified Product Summary VDS 55 V RDS on max. SMD version 2.7 mΩ ID 100 A P- TO262 -3-1


    Original     		PDF IPI100N06S3L-03 IPP100N06S3L-03 IPB100N06S3L-03 IPP100N06S3L-03 3PN06L03 BIPP100N06S3L-03, 3pn06l03 ANPS071E smd diode marking 78A 3pn06 INFINEON PART MARKING to263 K TRANSISTOR SMD MARKING CODE INFINEON smd PART MARKING OPTIMOS TRANSISTOR BIPP100N06S3L-03 INFINEON PART MARKING

    Untitled

    Abstract: No abstract text available
    Text: GaAs Pseudomorphic HEMT Transistor April 2008 - Rev 03-Apr-08 CF001-03 Features High Gain: Usable to 44 GHz Low Noise Figure 0.8 dB @ 12 GHz Wafer Qualification Procedure Customer Wafer Selection Available General Description Mimix CF001-03 GaAs-based transistor is a 300 um gate


    Original     		PDF 03-Apr-08 CF001-03 CF001-03 MIL-STD-750 comm-000X

    A SMD CODE MARKING

    Abstract: IPB100N06S3-03 IPI100N06S3-03 IPP100N06S3-03 PG-TO263-3-2 SP0000-87982 3pn06 3PN0603
    Text: IPB100N06S3-03 IPI100N06S3-03, IPP100N06S3-03 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 3.0 mΩ ID 100 A • MSL1 up to 260°C peak reflow


    Original     		PDF IPB100N06S3-03 IPI100N06S3-03, IPP100N06S3-03 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 EIA/JESD22-A114-B SP0000-87982 A SMD CODE MARKING IPB100N06S3-03 IPI100N06S3-03 IPP100N06S3-03 PG-TO263-3-2 SP0000-87982 3pn06 3PN0603

    OPP100

    Abstract: powervr 544 AM37X Jazelle v1 Architecture Reference Manual PowerVR sgx 545
    Text: AM3715/03 www.ti.com SPRS616A – JUNE 2010 – REVISED JUNE 2010 AM3715/03 Applications Processor 1 AM3715/03 Applications Processor 1.1 Features • AM3715/03 Applications Processor: – Compatible with OMAP 3 Architecture – MPU Subsystem • 1-GHz ARM CortexTM-A8 Core


    Original     		PDF AM3715/03 SPRS616A AM3715/03 OPP100 powervr 544 AM37X Jazelle v1 Architecture Reference Manual PowerVR sgx 545

    MIPI dbi

    Abstract: TI Sitara ARM MPU PowerVR sgx 545 NCS24 matrix tv m21 service mode manual AM37X 37X CUS CBC 557 B
    Text: AM3715/03 www.ti.com SPRS616B – JUNE 2010 – REVISED JULY 2010 AM3715/03 Applications Processor 1 AM3715/03 Applications Processor 1.1 Features • AM3715/03 Applications Processor: – Compatible with OMAP 3 Architecture – MPU Subsystem • 1-GHz ARM CortexTM-A8 Core


    Original     		PDF AM3715/03 SPRS616B AM3715/03 MIPI dbi TI Sitara ARM MPU PowerVR sgx 545 NCS24 matrix tv m21 service mode manual AM37X 37X CUS CBC 557 B

    4P04L03

    Abstract: IPP120P04P4L-03 IPB120P04P4L-03
    Text: IPB120P04P4L-03 IPI120P04P4L-03, IPP120P04P4L-03 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on (SMD Version) 3.1 mW ID -120 A Features • P-channel - Logic Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1


    Original     		PDF IPB120P04P4L-03 IPI120P04P4L-03, IPP120P04P4L-03 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPI120P04P4L-03 4P04L03 IPP120P04P4L-03

    3PN0403

    Abstract: IPB100N04S3-03 IPI100N04S3-03 IPP100N04S3-03 PG-TO263-3-2 GD 898
    Text: Preliminary Data Sheet IPB100N04S3-03 IPI100N04S3-03, IPP100N04S3-03 OptiMOS -T Power-Transistor Product Summary V DS 40 V R DS on (SMD Version) 3.0 mΩ ID 100 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1


    Original     		PDF IPB100N04S3-03 IPI100N04S3-03, IPP100N04S3-03 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3PN0403 IPI100N04S3-03 3PN0403 IPB100N04S3-03 IPI100N04S3-03 IPP100N04S3-03 PG-TO263-3-2 GD 898

    3pn06l03

    Abstract: 690 d80 IPB100N06S3L-03 IPI100N06S3L-03 IPP100N06S3L-03 PG-TO263-3-2 SP0000-87978 SMD CODE G13
    Text: IPB100N06S3L-03 IPI100N06S3L-03, IPP100N06S3L-03 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 2.7 mΩ ID 100 A • MSL1 up to 260°C peak reflow


    Original     		PDF IPB100N06S3L-03 IPI100N06S3L-03, IPP100N06S3L-03 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 EIA/JESD22-A114-B SP0000-87978 3pn06l03 690 d80 IPB100N06S3L-03 IPI100N06S3L-03 IPP100N06S3L-03 PG-TO263-3-2 SP0000-87978 SMD CODE G13

    3pn0403

    Abstract: IPB100N04S3-03 IPP100N04S3-03 IPI100N04S3-03 PG-TO263-3-2 Application Note ANPS071E
    Text: IPB100N04S3-03 IPI100N04S3-03, IPP100N04S3-03 OptiMOS -T Power-Transistor Product Summary V DS 40 V R DS on (SMD Version) 2.5 mΩ ID 100 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1


    Original     		PDF IPB100N04S3-03 IPI100N04S3-03, IPP100N04S3-03 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3PN0403 IPI100N04S3-03 3pn0403 IPB100N04S3-03 IPP100N04S3-03 IPI100N04S3-03 PG-TO263-3-2 Application Note ANPS071E

    3N0403

    Abstract: No abstract text available
    Text: Preliminary Data Sheet IPB80N04S3-03 IPI80N04S3-03, IPP80N04S3-03 OptiMOS -T Power-Transistor Product Summary V DS 40 V R DS on ,max (SMD version) 3.2 mΩ ID 80 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1


    Original     		PDF IPB80N04S3-03 IPI80N04S3-03, IPP80N04S3-03 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPB80N04S3-03 IPI80N04S3-03 3N0403

    FSBB30CH60C

    Abstract: AN-9044 FSBB15CH60C schematic diagram inverter air conditioner FSBB20CH60C pneumatic system used in train heat sink design guide, inverter, water cooling IGBT INVERTER CIRCUIT FSBB20CH60CT COMPONENT REQUIRED FOR MAKING MINI INVERTER
    Text: V4 Mini DIP SPM Application Note 2008-03-03 Application Note AN-9044 Smart Power Module Motion-SPM in Mini DIP SPM Ver.4 User’s Guide Written by: BokKeun Song JongMu Lee SooHyuk Han GuHo Jung Motion Control System HV FPG FAIRCHILD SEMICONDUCTOR 2008-03-03


    Original     		PDF AN-9044 FSBB30CH60C AN-9044 FSBB15CH60C schematic diagram inverter air conditioner FSBB20CH60C pneumatic system used in train heat sink design guide, inverter, water cooling IGBT INVERTER CIRCUIT FSBB20CH60CT COMPONENT REQUIRED FOR MAKING MINI INVERTER

    PN03L03

    Abstract: Q67042-S4055 40h120 ANPS071E SPB100N03S2L-03 SPI100N03S2L-03 SPP100N03S2L-03 Q67042-S4056
    Text: SPI100N03S2L-03 SPP100N03S2L-03,SPB100N03S2L-03 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 30 V • Enhancement mode RDS on max. SMD version 2.7 mΩ ID 100 A • Logic Level • Excellent Gate Charge x R DS(on) P- TO262 -3-1 P- TO263 -3-2


    Original     		PDF SPI100N03S2L-03 SPP100N03S2L-03 SPB100N03S2L-03 Q67042-S4056 SPB100N03S2L-03 Q67042-S4055 PN03L03 Q67042-S4094 PN03L03 Q67042-S4055 40h120 ANPS071E SPI100N03S2L-03 Q67042-S4056

    SD1135-03

    Abstract: No abstract text available
    Text: SD1135-03 RF & MICROWAVE TRANSISTORS VHF PORTABLE/MOBILE APPLICATIONS . . 150 MHz 7.5 VOLTS COMMON EMITTER P OUT = 2.5 W MIN. WITH 11.0 dB GAIN .280 4LSL M123 epoxy sealed ORDER CODE SD1135-03 BRANDING 1135-3 PIN CONNECTION DESCRIPTION The SD1135-03 is a 7.5 V Class C epitaxial silicon


    Original     		PDF SD1135-03 SD1135-03