EIA-364-37
Abstract: EIA-364-20 EIA-364-21 EIA-364-27 EIA-364-28 HDP-20 PED Engineering
Text: Product Specification 108-40005 02Feb09 Rev E AMPLIMITE* HDP-20 Subminiature D Connector With F Crimp Contacts 1. SCOPE 1.1. Content This specification covers the perform ance, test and quality requirem ents for the AMPLIMITE* HDP-20 subm iniature D connectors with rem ovable F crim p contacts. The assem bly consists of a two piece
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02Feb09
HDP-20
HDP-20
EIA-364-37
EIA-364-20
EIA-364-21
EIA-364-27
EIA-364-28
PED Engineering
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SiR460D
Abstract: SiR460DP siR460
Text: New Product SiR460DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0047 at VGS = 10 V 40g 0.0061 at VGS = 4.5 V 40g VDS (V) 30 Qg (Typ.) 16.8 nC • • • • Halogen-free According to IEC 61249-2-21 TrenchFET Gen III Power MOSFET
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SiR460DP
SiR460DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
SiR460D
siR460
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SI2333DS-T1-E3
Abstract: No abstract text available
Text: Si2333DS Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.032 at VGS = - 4.5 V - 5.3 0.042 at VGS = - 2.5 V - 4.6 0.059 at VGS = - 1.8 V - 3.9 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET
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Si2333DS
O-236
OT-23)
Si2333DS-T1-E3
Si2333DS-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
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DTC114ECA
Abstract: No abstract text available
Text: DTC114ECA NPN DIGITAL TRANSISTOR 3 P b Lead Pb -Free 1 2 SOT-23 Features: (1)GND (2)OUT (3)IN without connecting external input resistors(see equivalent circuit). to allow negative biasing of the input.They also have the advantage device design easy. Absolute maximum ratings(Ta=25℃)
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DTC114ECA
OT-23
02-Feb-09
OT-23
DTC114ECA
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DTC114EUA
Abstract: No abstract text available
Text: DTC114EUA NPN DIGITAL TRANSISTOR 3 P b Lead Pb -Free 1 2 Features: SOT-323(SC-70) (1)GND (2)OUT (3)IN without connecting external input resistors(see equivalent circuit). to allow negative biasing of the input.They also have the advantage device design easy.
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DTC114EUA
OT-323
SC-70)
02-Feb-09
OT-323
DTC114EUA
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Si4630DY
Abstract: Si4630DY-T1-E3 Si4630DY-T1-GE3
Text: Si4630DY Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 25 RDS(on) (Ω) ID (A)a 0.0027 at VGS = 10 V 36 0.0032 at VGS = 4.5 V 29 Qg (Typ) 49 nC • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET
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Si4630DY
Si4630DY-T1-E3
Si4630DY-T1-GE3
11-Mar-11
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Si4660DY
Abstract: Si4660DY-T1-E3 Si4660DY-T1-GE3
Text: Si4660DY Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 25 RDS(on) (Ω) ID (A)a 0.0058 at VGS = 10 V 23.1 0.007at VGS = 4.5 V 21 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg and UIS Tested
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Si4660DY
007at
Si4660DY-T1-E3
Si4660DY-T1-GE3
11-Mar-11
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Si2309DS
Abstract: Si2309DS-T1
Text: Si2309DS Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) ID (A) 0.340 at VGS = - 10 V - 1.25 0.550 at VGS = - 4.5 V -1 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET TO-236
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Si2309DS
O-236
OT-23)
Si2309DS-T1
Si2309DS-T1-E3
Si2309DS-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: New Product Si4136DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.002 at VGS = 10 V 46 0.0025 at VGS = 4.5 V 41 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested
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Si4136DY
Si4136DY-T1-GE3
11-Mar-11
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Si4634DY
Abstract: Si4634DY-T1-E3 Si4634DY-T1-GE3
Text: Si4634DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0052 at VGS = 10 V 24.5 0.0067 at VGS = 4.5 V 21.7 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg and UIS Tested
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Si4634DY
Si4634DY-T1-E3
Si4634DY-T1-GE3
11-Mar-11
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IRL540
Abstract: SiHL540 SiHL540-E3 IRL540PBF
Text: IRL540, SiHL540 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 64 Qgs (nC) 9.4 Qgd (nC) 27 Configuration Available • Repetitive Avalanche Rated 0.077 RoHS* • Logic-Level Gate Drive
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IRL540,
SiHL540
O-220
O-220
18-Jul-08
IRL540
SiHL540-E3
IRL540PBF
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IRFP350LC
Abstract: No abstract text available
Text: IRFP350LC, SiHFP350LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 400 RDS(on) (Ω) VGS = 10 V 0.30 Qg (Max.) (nC) 76 Qgs (nC) 20 Qgd (nC) 37 Configuration Single D Available RoHS* COMPLIANT DESCRIPTION TO-247
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IRFP350LC,
SiHFP350LC
O-247
18-Jul-08
IRFP350LC
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IRFR120 siliconix
Abstract: IRFR120 SiHFR120 IRFR120PBF IRFU120 SiHFR120-E3 marking 31 77 diode
Text: IRFR120, IRFU120, SiHFR120, SiHFU120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 100 RDS(on) (Ω) VGS = 10 V 0.27 Qg (Max.) (nC) 16 Qgs (nC) 4.4 Qgd (nC) 7.7 Configuration Single D DPAK (TO-252) Dynamic dV/dt Rating Repetitive Avalanche Rated
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IRFR120,
IRFU120,
SiHFR120
SiHFU120
O-252)
O-251)
IRFR120 siliconix
IRFR120
IRFR120PBF
IRFU120
SiHFR120-E3
marking 31 77 diode
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IRFZ48
Abstract: IRFZ48L IRFZ48S IRFZ48STRL SiHFZ48 SiHFZ48L-E3 SiHFZ48S SiHFZ48S-E3 SiHFZ48STL
Text: IRFZ48S, IRFZ48L, SiHFZ48S, SiHFZ48L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Qg Max. (nC) 110 Qgs (nC) 29 • • • • • • Qgd (nC) 36 DESCRIPTION VDS (V) 60 RDS(on) (Ω) VGS = 10 V Configuration 0.018 Single D G G D S Available RoHS*
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IRFZ48S,
IRFZ48L,
SiHFZ48S
SiHFZ48L
18-Jul-08
IRFZ48
IRFZ48L
IRFZ48S
IRFZ48STRL
SiHFZ48
SiHFZ48L-E3
SiHFZ48S-E3
SiHFZ48STL
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IRFIBF30GPBF
Abstract: IRFIBF30G SiHFIBF30G SiHFIBF30G-E3
Text: IRFIBF30G, SiHFIBF30G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package 900 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 Qgs (nC) 10 Qgd (nC) 42 Configuration • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 3.7 • Sink to Lead Creepage Distance = 4.8 mm
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IRFIBF30G,
SiHFIBF30G
O-220
18-Jul-08
IRFIBF30GPBF
IRFIBF30G
SiHFIBF30G-E3
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IRFI9634G
Abstract: SiHFI9634G SiHFI9634G-E3
Text: IRFI9634G, SiHFI9634G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • - 250 RDS(on) (Ω) VGS = - 10 V 1.0 Qg (Max.) (nC) 38 Qgs (nC) 8.0 Qgd (nC) 18 Configuration Single S TO-220 FULLPAK DESCRIPTION Third generation Power MOSFETs from Vishay provide the
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IRFI9634G,
SiHFI9634G
O-220
18-Jul-08
IRFI9634G
SiHFI9634G-E3
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IRFPE30
Abstract: No abstract text available
Text: IRFPE30, SiHFPE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rated 800 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 Qgs (nC) 9.6 Qgd (nC) 45 Configuration Available • Repetitive Avalanche Rated 3.0 • Isolated Central Mounting Hole
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IRFPE30,
SiHFPE30
O-247
O-247
18-Jul-08
IRFPE30
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IRL640
Abstract: IRL640 equivalent SiHL640 SiHL640-E3
Text: IRL640, SiHL640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) (Ω) VGS = 5.0 V 0.18 Qg (Max.) (nC) 66 Qgs (nC) 9.0 Qgd (nC) 38 Configuration Single D TO-220 Dynamic dV/dt Rating Repetitive Avalanche Rated
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IRL640,
SiHL640
O-220
O-220
18-Jul-08
IRL640
IRL640 equivalent
SiHL640-E3
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IRL530
Abstract: SiHL530 SiHL530-E3
Text: IRL530, SiHL530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 100 RDS(on) (Ω) VGS = 5.0 V 0.16 Qg (Max.) (nC) 28 Qgs (nC) 3.8 Qgd (nC) 14 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated
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IRL530,
SiHL530
O-220
O-220
18-Jul-08
IRL530
SiHL530-E3
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Untitled
Abstract: No abstract text available
Text: 293D Vishay Sprague Solid Tantalum Surface Mount Capacitors TANTAMOUNT Molded Case, Standard Industrial Grade FEATURES • Terminations: 100 % matte tin, standard, tin/lead available • Compliant terminations • Molded case available in six case codes
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QC300801/US0001
EIA535BAAC
18-Jul-08
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si4626a
Abstract: si4626
Text: New Product Si4626ADY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0033 at VGS = 10 V 30 0.0041 at VGS = 4.5 V 26.3 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET
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Si4626ADY
Si4626ADY-T1-E3
Si4626ADY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
si4626a
si4626
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mosfet 23 Tsop-6
Abstract: No abstract text available
Text: Si5406DC Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 12 RDS(on) (Ω) ID (A) 0.020 at VGS = 4.5 V 9.5 0.025 at VGS = 2.5 V 8.5 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs: 2.5 V Rated
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Si5406DC
Si5406DC-T1-E3
Si5406DC-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
mosfet 23 Tsop-6
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Untitled
Abstract: No abstract text available
Text: Si2335DS Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.051 at VGS = - 4.5 V - 4.0 0.070 at VGS = - 2.5 V - 3.5 0.106 at VGS = - 1.8 V - 3.0 Available • TrenchFET Power MOSFETs: 1.8 V Rated
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Si2335DS
O-236
OT-23)
Si2335DS-T1-E3
Si2335DS-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
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Untitled
Abstract: No abstract text available
Text: 3 4 TH IS DRAWING IS U N P U B L IS H E D . RELEASED FOR PU B LIC ATIO N 2 - ,- R E V IS IO N S ALL INTERNATIONAL RIGHTS RESERVED. COPYRIGHT BY TYCO ELECTRONICS CORPORATION. P LTR D E S C R IP TIO N A1 REVISED PER DATE E C R - 0 9 - 0 0 1 88 3 DWN 02FEB09
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02FEB09
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