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    01N80 Search Results

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    01N80 Price and Stock

    IXYS Corporation IXTY01N80

    MOSFET N-CH 800V 100MA TO252AA
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    DigiKey IXTY01N80 Tube 50
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    Mouser Electronics IXTY01N80
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    IXYS Corporation IXTU01N80

    MOSFET N-CH 800V 100MA TO251
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    DigiKey IXTU01N80 Tube 50
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    Infineon Technologies AG T1901N80TOHXPSA1

    SCR MODULE 8000V 3300A DO200AE
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    DigiKey T1901N80TOHXPSA1 Tray 1
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    Avnet Americas T1901N80TOHXPSA1 Tray 52 Weeks 1
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    EBV Elektronik T1901N80TOHXPSA1 53 Weeks 1
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    Vishay Dale NTHS1206N01N8002JE

    THERMISTOR NTC 80KOHM 3964K 1206
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    DigiKey NTHS1206N01N8002JE Reel 2,000
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    Vishay Dale NTHS0603N01N8002JE

    THERMISTOR NTC 80KOHM 3964K 0603
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    DigiKey NTHS0603N01N8002JE Cut Tape 1
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    NTHS0603N01N8002JE Digi-Reel 1
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    NTHS0603N01N8002JE Reel 2,000
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    Find more 01N80 price and stock on Findchips.com

    01N80 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    521 MOSFET

    Abstract: 01N100 237 521 02
    Text: High Voltage MOSFET N-Channel, Enhancement Mode IXTU 01N80 IXTY 01N80 VDSS ID25 = 800 V = 100mA = 50 Ω RDS on Symbol Test Conditions Maximum Ratings 01N100 VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 800 V VGS Continuous ±20


    Original     		PDF 01N80 100mA 01N100 O-251 O-252 728B1 521 MOSFET 01N100 237 521 02

    Untitled

    Abstract: No abstract text available
    Text: High Voltage MOSFET N-Channel, Enhancement Mode IXTU 01N80 IXTY 01N80 VDSS ID25 = 800 V = 100mA = 50 Ω RDS on Symbol Test Conditions VDSS TJ = 25°C to 150°C VDGR TJ = 25°C to 150°C; R VGS Maximum Ratings 01N100 800 = 1 MΩ V 800 V Continuous ±20 V


    Original     		PDF 01N80 100mA 01N100 O-251 728B1

    01N80

    Abstract: No abstract text available
    Text: High Voltage MOSFET N-Channel, Enhancement Mode VDSS IXTU 01N80 IXTU 01N100 ID25 RDS on 800 V 100 mA 80 W 1000 V 100 mA 80 W Preliminary data Symbol Test Conditions Maximum Ratings 01N80 01N100 VDSS TJ = 25°C to 150°C 800 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 01N80 01N100 01N100 O-251 HDM235

    01N80

    Abstract: 01N100 TO252 rthjc TO-251 Outline
    Text: High Voltage MOSFET N-Channel, Enhancement Mode IXTU 01N80 IXTY 01N80 VDSS ID25 = 800 V = 100mA = 50 Ω RDS on Preliminary data sheet Symbol Test Conditions Maximum Ratings 01N100 VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 800


    Original     		PDF 01N80 100mA 01N100 O-251 O-252 01N80 01N100 TO252 rthjc TO-251 Outline

    Untitled

    Abstract: No abstract text available
    Text: aixYS H igh V o lta g e M O SFET IX TU 01 N 80 v D3S IX TU 01 N 100 lD25 =800/1000 V = 100 mA ^ D S o n = 80 f ì N-Channel, Enhancement Mode Preliminary data Symbol Test Conditions Maximum Ratings 01N80 01N100 VDSS Tj = 25°C to 150°C 800 1000 V VpOR


    OCR Scan     		PDF 01N80 01N100 O-251

    Untitled

    Abstract: No abstract text available
    Text: □ IXYS High Voltage MOSFET N-Channel, Enhancement Mode V DSS D DS on ^D25 80 0 V 100 m A 80 Q 1000 V 100 m A 80 Q IX T U 0 1 N 80 IX T U 0 1 N 100 Preliminary data Maximum Ratings 01N80 01N100 Symbol Test Conditions V DSS Td = 25°C to 150°C 800 1000 V


    OCR Scan     		PDF 01N80 01N100 O-251

    Untitled

    Abstract: No abstract text available
    Text: High Voltage MOSFET N-Channel, Enhancement Mode V DSS IX T U 0 1 N 8 0 tXTU 0 1 N 10 0 p ^D25 DS on a 800 V 100 m A 80 1000 V 100 m A 80 Q Preliminary data Symbol Test Conditions Maximum Ratings 01N80 01N100 v*D S S ^ = 25°G to 150°C 800 1000 V V« ^ 800


    OCR Scan     		PDF 01N80 01N100 O-251

    40n80

    Abstract: 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI
    Text: Alphanumerical Index c CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 io8 23-08 ¡02 23-12 ¡02 23-16 ¡02 300-12 io3 300-16 io3 35-08 ¡04 35-12 ¡04 35-14 ¡04 72-12 ¡08 72-16 ¡08 8-08 ¡02 8-12 ¡02 18 18 18 18 18 18 18 18 18 18 18 18 18


    OCR Scan     		PDF 5-10A 52-14N01 52-16N01 55-12N 55-14N07 55-18N 60-08N 60-16N 62-08N 62-12N 40n80 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI

    IRFP 260 M

    Abstract: 5n100 6n80 42n20 12N50A IRFP IXTN 36N50 C 67N10 irfp 240
    Text: Standard Power MOSFETs and MegaMOS FETs N-Channel Enhancement-Mode Tjh = ► New IXTH IXTH IRFP IXTH IXTH IRFP IXTH IXTH IXTH IRFP IXTH IRFP IXTH ► IXTH IXTH IXTH ► IXTH ► IXTU ►IXTU IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH


    OCR Scan     		PDF 67N10 75N10 42N20 50N20 35N30 40N30 12N50A 21N50 24N50 30N50 IRFP 260 M 5n100 6n80 IRFP IXTN 36N50 C irfp 240

    11n80

    Abstract: ixys ixth 21N50 C2100 G264 2N100 ixth75n10 74N20 C2104 C294 13n80
    Text: Contents D V OSS max Tc = 2 5 “C Tc = 2 5 °C V A Q 100 67 75 0.025 0.02 IXTH 67N10 IXTH 75N10 200 30 0.085 IRFP 250 42 50 0.06 0.045 IXTH 42N20 IXTH 50N20 74 0.035 IXTH 68N20 85 0.025 23 0.14 IRFP 254 C2-20 38 0.075 IRFP 264 C2-22 35 40 0.1 0.085 0.088


    OCR Scan     		PDF O-247 O-251 O-204 O-264 15N60 20N60 15N70 01N80* 35N30 40N30 11n80 ixys ixth 21N50 C2100 G264 2N100 ixth75n10 74N20 C2104 C294 13n80

    DSE 130 -06A

    Abstract: vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50
    Text: Alphanumerical Index A AXC-051 AXC-051-R AXC-102 AXV-002 48 48 48 49 C CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 ¡08 19-08 h oi 19-08 h o lS 19-12 h o i 19-12 h o lS 20*12 io1 20-14 ¡01 20-16 ¡01


    OCR Scan     		PDF AXC-051 AXC-051-R AXC-102 AXV-002 015-14to1 2x45-16io1 2x60-08io1 2x60-12io1 2x60-14io1 2x60-16io1 DSE 130 -06A vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50