Untitled
Abstract: No abstract text available
Text: STI17NF25 - STD17NF25 STF17NF25 - STP17NF25 N-channel 250V - 0.14Ω - 17A - TO-220/FP - DPAK - I2PAK Low gate charge STripFET II Power MOSFET General features Type VDSS RDS on ID PTOT STD17NF25 250V < 0.165Ω 17A 90W STI17NF25 250V < 0.165Ω 17A 90W
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STI17NF25
STD17NF25
STF17NF25
STP17NF25
O-220/FP
STI17NF25
STF17NF25
O-220
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STA517B
Abstract: VCC1-B30 C82 004 dual diode C101 C109 C110 R104 STA517B13TR vcc1b30
Text: STA517B 60-V 6-A quad power half bridge Features Low input/output pulse width distortion 200 mΩ RdsON complementary DMOS output stage CMOS-compatible logic inputs Thermal protection Thermal-warning output Undervoltage protection PowerSO36 package
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STA517B
PowerSO36
STA517B
VCC1-B30
C82 004 dual diode
C101
C109
C110
R104
STA517B13TR
vcc1b30
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Untitled
Abstract: No abstract text available
Text: STA516B 65 V, 7.5 A quad power half bridge Datasheet - production data Description STA516B is a monolithic quad half-bridge stage in multipower BCD technology. The device can be used as dual bridge or reconfigured, by connecting pin CONFIG to pins VDD, as a single
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STA516B
STA516B
PowerSO36
DocID13183
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Untitled
Abstract: No abstract text available
Text: STA516B 65 V, 7.5 A quad power half bridge Datasheet - production data Description STA516B is a monolithic quad half-bridge stage in multipower BCD technology. The device can be used as dual bridge or reconfigured, by connecting pin CONFIG to pins VDD, as a single
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STA516B
STA516B
PowerSO36
DocID13183
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17NF25
Abstract: 17NF2 STI17NF25 STP17NF25 STD17NF25 STF17NF25 st 393 JESD97 17nf25 data
Text: STI17NF25 - STD17NF25 STF17NF25 - STP17NF25 N-channel 250V - 0.14Ω - 17A - TO-220/FP - DPAK - I2PAK Low gate charge STripFET II Power MOSFET General features Type VDSS RDS on ID PTOT STD17NF25 250V < 0.165Ω 17A 90W STI17NF25 250V < 0.165Ω 17A 90W
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STI17NF25
STD17NF25
STF17NF25
STP17NF25
O-220/FP
STI17NF25
STF17NF25
O-220
17NF25
17NF2
STP17NF25
STD17NF25
st 393
JESD97
17nf25 data
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MARKING code mx stmicroelectronics
Abstract: EMIF04-1005M8 EMIF04-1502M8 JESD97
Text: EMIF04-1005M8 IPAD 4 line low capacitance EMI filter and ESD protection in Micro QFN package Main product characteristics 8 Where EMI filtering in ESD sensitive equipment is required: 7 1 G ND 2 GND • LCD & CAMERA for Mobile phones 6 3 ■ Computers and printers
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EMIF04-1005M8
EMIF04-1502M8
MARKING code mx stmicroelectronics
EMIF04-1005M8
JESD97
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17NF25
Abstract: 17NF2 17nf25 data 17nF DSA0067465 STD17NF25 STI17NF25 STF17NF25 STP17NF25
Text: STI17NF25 - STD17NF25 STF17NF25 - STP17NF25 N-channel 250V - 0.14Ω - 17A - TO-220/FP - DPAK - I2PAK Low gate charge STripFET II Power MOSFET General features Type VDSS RDS on ID PTOT STD17NF25 250V < 0.165Ω 17A 90W STI17NF25 250V < 0.165Ω 17A 90W
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STI17NF25
STD17NF25
STF17NF25
STP17NF25
O-220/FP
STP17NF25
O-220
17NF25
17NF2
17nf25 data
17nF
DSA0067465
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17NF2
Abstract: No abstract text available
Text: STI17NF25 - STD17NF25 STF17NF25 - STP17NF25 N-channel 250V - 0.14Ω - 17A - TO-220/FP - DPAK - I2PAK Low gate charge STripFET II Power MOSFET General features Type VDSS RDS on ID PTOT STD17NF25 250V < 0.165Ω 17A 90W STI17NF25 250V < 0.165Ω 17A 90W
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STI17NF25
STD17NF25
STF17NF25
STP17NF25
O-220/FP
STI17NF25
STF17NF25
O-220
17NF2
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Untitled
Abstract: No abstract text available
Text: EMIF04-1502M8 4-line IPAD low capacitance EMI filter and ESD protection in micro QFN package Features • EMI asymmetrical I/O low-pass filter 8 ■ High efficiency in EMI filtering 7 ■ Very low PCB space consumption: 1.7 mm x 1.5 mm 6 3 5 4 ■ Very thin package: 0.6 mm max
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EMIF04-1502M8
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STA516B
Abstract: ST50X STA50X C101 C109 C110 R104 STA516B13TR ma706
Text: STA516B 60 V 6 A quad power half bridge Features • Minimum input output pulse width distortion ■ 200 mΩ RdsON complementary DMOS output stage ■ CMOS compatible logic inputs ■ Thermal protection ■ Thermal warning output ■ Under voltage protection
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STA516B
STA516B
160and
ST50X
STA50X
C101
C109
C110
R104
STA516B13TR
ma706
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LQFP80
Abstract: w32x6 PM0020 ARM966E-S LQFP128 M44X6 lqfp 12X12 STR9 flash programming W44X6 ARM7 MICROCONTROLLER induction motor speed control
Text: STR91xF ARM966E-S 16/32-Bit Flash MCU with Ethernet, USB, CAN, AC motor control, 4 timers, ADC, RTC, DMA • 16/32-bit 96 MHz ARM9E based MCU – ARM966E-S RISC core: Harvard architecture, 5-stage pipeline, Tightly-Coupled Memories SRAM and Flash – STR91xF implementation of core adds highspeed burst Flash memory interface,
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STR91xF
ARM966E-STM
16/32-Bit
ARM966E-S
STR91xF
32-bits
256KB/512KB
LQFP80
w32x6
PM0020
LQFP128
M44X6
lqfp 12X12
STR9 flash programming
W44X6
ARM7 MICROCONTROLLER induction motor speed control
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EMIF04-1005M8
Abstract: No abstract text available
Text: EMIF04-1005M8 4-line IPAD low capacitance EMI filter and ESD protection in micro QFN package Features • EMI symmetrical I/O low-pass filter 8 ■ High efficiency in EMI filtering: -34 dB at frequencies from 900 MHz to 1.8 GHz 7 ■ Very low PCB space consumption:
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EMIF04-1005M8
EMIF04-1005M8
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Untitled
Abstract: No abstract text available
Text: ESDA6V1M6, ESDA6V1-5M6 4- and 5-line Transil arrays for ESD protection Features • High ESD protection level ■ High integration ■ Suitable for high density boards ■ 4 unidirectional Transil diodes ESDA6V1M6 ■ 5 unidirectional Transil diodes (ESDA6V1-5M6)
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N3NF06
Abstract: st MARKING E4 JESD97 STN3NF06 N-3-NF
Text: STN3NF06 N-channel 60V - 0.07Ω -4A - SOT-223 STripFET II Power MOSFET General features Type VDSS @Tjmax RDS(on) ID STN3NF06 60V <0.1Ω 4A • Exceptional dv/dt capability ■ 100% avalanche tested ■ Avalanche rugged technology 2 1 2 3 SOT-223 Description
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STN3NF06
OT-223
N3NF06
st MARKING E4
JESD97
STN3NF06
N-3-NF
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STA516B
Abstract: STA30X 2.1 to 5.1 home theatre circuit diagram
Text: STA516B 65-volt, 7.5-amp, quad power half bridge Features ! Low input/output pulse-width distortion ! 200 mΩ RdsON complementary DMOS output stage ! CMOS-compatible logic inputs ! Thermal protection ! Thermal warning output ! Undervoltage protection PowerSO36 package
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STA516B
65-volt,
PowerSO36
STA516B
STA30X
2.1 to 5.1 home theatre circuit diagram
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Untitled
Abstract: No abstract text available
Text: EMIF04-1005M8 4-line IPAD low capacitance EMI filter and ESD protection in micro QFN package Features • EMI symmetrical I/O low-pass filter 8 ■ High efficiency in EMI filtering: -34 dB at frequencies from 900 MHz to 1.8 GHz 7 ■ Very thin package: 0.6 mm max
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EMIF04-1005M8
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JESD97
Abstract: qfn 44 PACKAGE footprint
Text: ESDALC6V1M6, ESDALC6V1-5M6 4- and 5-line low capacitance Transil arrays for ESD protection Features • High ESD protection level ■ High integration ■ Suitable for high density boards ■ 4 unidirectional Transil diodes ESDALC6V1M6 ■ 5 unidirectional Transil diodes
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Power MOSFET SOT-223
Abstract: st MARKING E4 JESD97 N2NE10L STN2NE10L
Text: STN2NE10L N-channel 100V - 0.33Ω -2A - SOT-223 STripFET Power MOSFET General features Type VDSS @Tjmax RDS(on) ID STN2NE10L 100V <0.4Ω 1.8A • Exceptional dv/dt capability ■ Avalanche rugged technology ■ 100% avalanche tested ■ Low threshold drive
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STN2NE10L
OT-223
Power MOSFET SOT-223
st MARKING E4
JESD97
N2NE10L
STN2NE10L
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EMIF04-1502M8
Abstract: JESD97
Text: EMIF04-1502M8 4-line IPAD low capacitance EMI filter and ESD protection in micro QFN package Features • EMI asymmetrical I/O low-pass filter 8 ■ High efficiency in EMI filtering 7 ■ Very low PCB space consumption: 1.7 mm x 1.5 mm 6 3 5 4 ■ Very thin package: 0.6 mm max
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EMIF04-1502M8
EMIF04-1502M8
JESD97
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STA517B
Abstract: AN1994 STA517 VCC1 C101 C109 C110 R104 STA517B13TR diode c83 004
Text: STA517B 60-V 6.5-A quad power half bridge Features Low input/output pulse width distortion 200 mΩ RdsON complementary DMOS output stage CMOS-compatible logic inputs Thermal protection Thermal warning output Undervoltage protection PowerSO36 package
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STA517B
PowerSO36
STA517B
AN1994
STA517
VCC1
C101
C109
C110
R104
STA517B13TR
diode c83 004
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5n20v
Abstract: st mosfet 5n20v Part Marking STMicroelectronics TSSOP8 JESD97 STC5NF20V
Text: STC5NF20V N-channel 20V - 0.030Ω - 5A - TSSOP8 2.7V-drive STripFET II Power MOSFET Features Type VDSS RDS on ID STC5NF20V 20V < 0.040 Ω (@ 4.5 V) < 0.045 Ω (@ 2.7 V) 5A • Ultra low threshold gate drive (2.7V) ■ Standard outline for easy automated surface
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STC5NF20V
5n20v
st mosfet 5n20v
Part Marking STMicroelectronics TSSOP8
JESD97
STC5NF20V
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C82 004 dual diode
Abstract: No abstract text available
Text: STA517B 60-V 6.5-A quad power half bridge Features Low input/output pulse width distortion 200 mΩ RdsON complementary DMOS output stage CMOS-compatible logic inputs Thermal protection Thermal warning output Undervoltage protection s
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STA517B
STA517B
C82 004 dual diode
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Untitled
Abstract: No abstract text available
Text: M65KG512AA 512Mbit 4 Banks x 8M x 16 1.8V supply, DDR low power SDRAM Features • 512Mbit Synchronous Dynamic Ram – Organized as 4 Banks of 8 Mwords, each 16 bits wide ■ Double Data Rate (DDR) – 2 Data Transfers/Clock cycle – Data Rate: 266 Mbit/s (max)
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M65KG512AA
512Mbit
512Mbit
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w32x6
Abstract: M44X6 STR9 flash programming STR912FW44X ARM966E-S LQFP128 LQFP80 str91xfw STR912FW42X PM0020
Text: STR91xF ARM966E-S 16/32-Bit Flash MCU with Ethernet, USB, CAN, AC motor control, 4 timers, ADC, RTC, DMA • 16/32-bit 96 MHz ARM9E based MCU – ARM966E-S RISC core: Harvard architecture, 5-stage pipeline, Tightly-Coupled Memories SRAM and Flash – STR91xF implementation of core adds highspeed burst Flash memory interface,
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STR91xF
ARM966E-STM
16/32-Bit
ARM966E-S
STR91xF
32-bits
256KB/512KB
w32x6
M44X6
STR9 flash programming
STR912FW44X
LQFP128
LQFP80
str91xfw
STR912FW42X
PM0020
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