00S2R53 Search Results

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Text: JS8835-AS FEATURES: • ■ HIGH p1dB = HIGH Gfdg “ POWER 24 dBm at f = 8 GHz GAIN 8 dB st f = 8 GHz ■ SUITABLE FOR C-BAND ■ ION IMPLANTATION ■ CHIP FORM AMPLIFIER RF P E R F O R M A N C E S P E C I F I C A T I O N S Ta = 2 5 ° C JS 8835-A S TYPE NUMBER