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    acrian RF POWER TRANSISTOR

    Abstract: F627-8Q1 F627-8-Q1 VTV-150-4 ACRIAN sje transistor VTV075 VTV150 VTV-150 VTV-150-3
    Text: • m r s -é à -^ T S T N c -^ r ^ r io ia a -iiB DDD1S5G a | « m m p w GENERAL m h -v m m m m m «nn*n« w «h » n m m m r m m p h r i m m b m h m □ 7“-> T -7 J AN ■ VTV-150 DESCRIPTION The VTV -1 5 0 is a silicon NPN transistor designed for broadcast


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    PDF T82998-7c 5-70pF 2-20pF 25-240pF 1000pF F627-8Q1 acrian RF POWER TRANSISTOR F627-8Q1 F627-8-Q1 VTV-150-4 ACRIAN sje transistor VTV075 VTV150 VTV-150 VTV-150-3

    Untitled

    Abstract: No abstract text available
    Text: D IO D E M O D U L E f .R.d . FDF60BA40/60 Power Diode Module F D F 6 0 B A is designed for single phase full wave rectification, which has four fast recovery diodes connected in a single phase bridge configuration. F D F 6 0 B A is suitable for high frequency application requiring low loss and high speed


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    PDF FDF60BA40/60 100ns DC60A 00A/// 00D1S23 Q00152M

    DIODE A93

    Abstract: 251C FDF60BA 5210s TI-251
    Text: DIODE M ODULE F.R.D. FDF60BA40/60 UL;E76102(M ) Power Diode Module F D F 6 0 B A is designed for single phase full wave rectification, which has four fast recovery diodes connected in a single phase bridge configuration. F D F 6 0 B A is suitable for high frequency application requiring low loss and high speed


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    PDF FDF60BA40/60 FDF60BA 100ns DC60A E76102 for36 00D1S23 FDF60BA 7CH1243 DIODE A93 251C 5210s TI-251

    Untitled

    Abstract: No abstract text available
    Text: AP E X mCROTECHNOLOGY P i=V“ . CORP b?E J> Qfl7flb3b 0001520 T3T H A U T ._ >u PAI2 • PA12A A P E X M ICROTECH NOLOG Y CORPORATION • APPLICATIONS HOTLINE 8 0 0 5 46-A P EX 80 0-54 6-27 3 9 FEATURES • • • • • • LOW THERMAL RESISTANCE — 1.4 C/W


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    PDF PA12A 546-APEX PA12H 100kHz 500Si, 500i2, PA12MU