Untitled
Abstract: No abstract text available
Text: September 1996 Revision 1.0 FUJITSU DATA SHEET - E O B 1 U V 6 4 1 1 /4 -(60/70)TG -S 8MByte (1Mx64) CMOS EDO DRAM Module - 3.3V General Description The E O B 1 U V 6 4 1 (1 /4 )-(6 0 /7 0 )T G -S is a high pe rfo rm an ce, E D O (E xten ded D ata O ut) 8-m e ga byte dyn am ic RAM m odule o rg a
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1Mx64)
144-pins,
B81V1
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Untitled
Abstract: No abstract text available
Text: cP ÏITSIJ I A M. July 1997 Revision 1.0 data sheet EOB1UV641 1/4 B-60TG-S 8MByte ( I M x 64) CMOS EDO DRAM Module -3.3V General Description The EOB1UV641 (1/4)B-60TG-S is a high performance, EDO (Extended Data Out) 8-megabyte dynamic RAM module organized
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EOB1UV641(
B-60TG-S
EOB1UV641
B-60TG-S
144-pin,
MB81V1
165B-60PFTN
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Untitled
Abstract: No abstract text available
Text: cP March 1997 Revision 2.1 FUJI' DATA SHEET - * S0B2U V6482- 67/84/100/125 T-S 16MByte (2M x 64) CMOS Synchronous DRAM Module General Description The SOB2UV6482-(67/84/100/125)T-S is a high performance, 16-megabtye synchronous, dynamic RAM module organized as
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V6482-
16MByte
SOB2UV6482-
16-megabtye
144-pin,
B81117822A-
16MByte
MP-SDRAMM-DS-20370-3/97
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Untitled
Abstract: No abstract text available
Text: c P IITSU December 1997 Revision 1.0 data sheet SOB4UV6414- 67/84/100/125 T-S 32MByte (4M x 64) CMOS Synchronous DRAM Module General Description The SOB4UV6414-(67/84/100/125)T-S is a high performance, 32-megabtye synchronous, dynamic RAM module organized as
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SOB4UV6414-
32MByte
32-megabtye
144-pin,
B811641642A
4Mx16
67Mhz
84Mhz
100Mhz
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Untitled
Abstract: No abstract text available
Text: cP September 1996 Révision 1.0 ~ DATA SHEET - £ OB2U V6482- 60/70 TG-S 16MByte (2Mx 64) CMOS EDO DRAM Module - 3.3V General Description TheEOB2UV6482-(60/70)TG-S is a high performance, EDO (Extended Data Out) 16-megabyte dynamic RAM module organized
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V6482-
16MByte
TheEOB2UV6482-
16-megabyte
144-pins,
V17805A-
144-pin
158x2
0070x2
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Untitled
Abstract: No abstract text available
Text: January 1997 Revision 2.0 D A TA SH EET - SOB2UV6482- 67/84/100/125 T-S 16MByte (2Mx 64) CMOS Synchronous DRAM Module General Description The SOB2llV6482-(67/84/100/125)T-S is a high performance, 16-megabtye synchronous, dynamic RAM module organized as
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SOB2UV6482-
16MByte
SOB2llV6482-
16-megabtye
144-pin,
MB81117822A-
200mV.
V6482-
144-pin
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Untitled
Abstract: No abstract text available
Text: cP IITSU December 1997 Revision 1.0 data sheet S0B8U V6484- 67/84/100/125 T-S 64MByte (8M x 64) CMOS Synchronous DRAM Module General Description The SOB8UV6484-(67/84/100/125)T-S is a high performance, 64-megabtye synchronous, dynamic RAM module organized as
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V6484-
64MByte
SOB8UV6484-
64-megabtye
144-pin,
MB81164842A-
67Mhz
84Mhz
100Mhz
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Untitled
Abstract: No abstract text available
Text: cP FUJI March 1997 Revision 2.1 DATA SHEET - * SOB2UV6482- 67/84/100/125 T-S 16MByte (2Mx 64) CMOS Synchronous DRAM Module General Description The SOB2UV6482-(67/84/100/125)T-S is a high performance, 16-megabtye synchronous, dynamic RAM module organized as
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SOB2UV6482-
16MByte
16-megabtye
144-pin,
B81117822A-
V6482-
144-pin
158x2
0070x2
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Untitled
Abstract: No abstract text available
Text: cP September 1996 Revision 1.0 DATA S H E E T- EOB1UV641 1/4 -(60/70) TG-S 8MByte (1Mx 64) CMOS EDO DRAM Module -3.3V General Description The EO B1UV641(1/4)-(60/70)TG-S is a high performance, EDO (Extended Data Out) 8-megabyte dynamic RAM module orga
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EOB1UV641
B1UV641
144-pins,
MB81V1
1Mx16
144-pin
158x2
0070x2
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TGS 880
Abstract: No abstract text available
Text: FUJITSU September 1996 Revision 1.0 DATA SHEET - EOB2U V6482- 60/70 T G -S 16MByte (2Mx 64) CMOS EDO DRAM Module -3.3V General Description TheEOB2UV6482-(60/70)TG-S is a high performance, EDO (Extended Data Out) 16-megabyte dynamic RAM module organized
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V6482-
16MByte
TheEOB2UV6482-
16-megabyte
144-pins,
MB81V17805A-
TGS 880
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Untitled
Abstract: No abstract text available
Text: January 1997 Revision 2.0 DATA S H E E T - SOB2UV6412- 67/84/100/125 T-S 16MByte (2M x 64) CMOS Synchronous DRAM Module General Description The SOB2UV6412-(67/84/100/125)T-S is a high performance, 16-megabtye synchronous, dynamic RAM module organized as
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SOB2UV6412-
16MByte
16-megabtye
144-pin,
MB811171622A-
1Mx16
144-pin
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Untitled
Abstract: No abstract text available
Text: cP August 1996 Revision 1.0 FUJI' DATA SHEET - * SOB2U V6482- 67/84/100/125 T-S 16MByte (2M x 64) CMOS Synchronous DRAM Module General Description The S O B 2U V 6 4 8 2 -(6 7 /8 4 /1 0 0 /1 2 5 )T -S is a high pe rfo rm an ce, 16-m egabtye synch ron ous, dyn am ic RAM m odule organ ized as
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V6482-
16MByte
144-pin,
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Untitled
Abstract: No abstract text available
Text: cP August 1996 Revision 1.0 FUJI' DATA SHEET - * SOB2UV6412- 67/84/100/125 T-S 16MByte (2M x 64) CMOS Synchronous DRAM Module General Description The S O B 2U V 6 4 1 2 -(6 7 /8 4 /1 0 0 /1 2 5 )T -S is a high pe rfo rm an ce, 16-m egabtye synch ron ous, dyn am ic RAM m odule organ ized as
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SOB2UV6412-
16MByte
144-pin,
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Untitled
Abstract: No abstract text available
Text: cP August 1996 Revision 1.0 DATA SHEET FUJI - ' SOB2UV6482- 67/84/100/125 T-S 16MByte (2M x 64) CMOS Synchronous DRAM Module General Description The SOB2UV6482-(67/84/100/125)T-S is a high performance, 16-megabtye synchronous, dynamic RAM module organized as
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SOB2UV6482-
16MByte
16-megabtye
144-pin,
MB81117822A-
16puts
200mV.
37MT7Sb
001fi757
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