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    001B347 Search Results

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    lr32053

    Abstract: DP6610 DP6210 DP2110 DP2210 DP621 DP2610 DP6110 DP1110 DP1210
    Text: INTERNATIONAL RECTIFIER bSE D • MÖ5545Z 001b347 1Ì4 ■ INR Data Sheet No. PD-1.017B INTERNATIONAL RECTIFIER IQ R SERIES DP Microelectronic Power IC Relay 1 Amp ChipSwitch DIP Relay 20280V AC S’X Power IC Chips 30 Amps Surge 4000V RMS Isolation Zero Voltage Turn-On


    OCR Scan     		PDF 001b347 0-280V O-116 lr32053 DP6610 DP6210 DP2110 DP2210 DP621 DP2610 DP6110 DP1110 DP1210

    uPD77230

    Abstract: SICK RM pd77230
    Text: N E C ELECTRONICS INC Tfi 6427525 N E C D e J LME75B5 OOlt.343 T ELECTRONICS INC 980 16343 D //P D 7 7 2 3 0 ADVANCED s ig n a l p ro c e s s o r N E C Electronics Inc. Z ' o r M a rc h 1988 Description Applications T h e /UPD77230 A d v a n c e d S ig n a l P ro c e s s o r A S P is


    OCR Scan     		PDF LME75B5 uPD77230 /UPD77230 b427525 642752S SICK RM pd77230

    KM641001

    Abstract: No abstract text available
    Text: CMOS SRAM KM641001 262,144 WORD x 4 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 2 0 ,2 5 ,35ns max. • Low Power Dissipation Standby (TTL) : 40mA (max.) (CMOS) : 2mA (max) Operating : KM641001 -20 :1 50mA (max.) KM641001 -25 : 130mA (max.)


    OCR Scan     		PDF KM641001 KM641001 130mA KM641001-35: 110mA KM641001P 28-DIP-400 KM641001J 28-SQJ-400

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b?E D • 7^4142 GGlb343 S73 ■ SMGK KM416C1000 CMOS DRAM 1M x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM416C1000 is a CMOS high speed 1,048,576 bit x 16 Dynamic Random Access Memory. Its


    OCR Scan     		PDF GGlb343 KM416C1000 KM416C1000 130ns KM416C1000-8 150ns KM416C1000-10 100ns 180ns KM416C1000-7

    MT28F002B1VG-8 B

    Abstract: No abstract text available
    Text: PRELIMINARY MT28F002B1 256K x 8 FLASH MEMORY MICRON U QUANTUM DEVtCEft, INC. FLASH MEMORY 256K x 8 S m artV o ltag e, FEATURES • Five erase blocks: 16KB boot block protected Two 8KB parameter blocks Two main memory blocks • Deep Power-Down Mode: 8(aA at 5V Vcc; 8|xA at


    OCR Scan     		PDF MT28F002B1 100ns 110ns, 150ns 40-Pin VMT28F002B1 001b34b MT28F002B1VG-8 B