2ST5949
Abstract: 0015923C
Text: 2ST5949 High power NPN epitaxial planar bipolar transistor Features • High breakdown voltage VCEO = 250 V ■ Complementary to 2ST2121 ■ Typical ft = 25 MHz ■ Fully characterized at 125 oC s ct Application ■ 1 u d o 2r P e Audio power amplifier
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2ST5949
2ST2121
2ST5949
0015923C
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0015923C
Abstract: No abstract text available
Text: 2ST2121 High power PNP epitaxial planar bipolar transistor Preliminary data Features • High breakdown voltage VCEO = 250 V ■ Complementary to 2ST5949 ■ Fast switching speed ■ Typical ft = 25 MHz ■ Fully characterized at 125 oC 1 Applications ■
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2ST2121
2ST5949
2ST2121
0015923C
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0015923C
Abstract: No abstract text available
Text: 2ST5949 High power NPN epitaxial planar bipolar transistor Preliminary data Features • High breakdown voltage VCEO = 250 V ■ Complementary to 2ST2121 ■ Fast-switching speed ■ Typical ft = 25 MHz ■ Fully characterized at 125 oC 1 Applications ■
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2ST5949
2ST2121
2ST5949
0015923C
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2ST5949
Abstract: 2ST2121 JESD97
Text: 2ST5949 High power NPN epitaxial planar bipolar transistor Features • High breakdown voltage VCEO = 250 V ■ Complementary to 2ST2121 ■ Typical ft = 25 MHz ■ Fully characterized at 125 oC Application ■ 1 Audio power amplifier 2 TO-3 Description The device is a NPN transistor manufactured
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2ST5949
2ST2121
2ST5949
2ST2121
JESD97
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2N6287
Abstract: 2N6284 amplifier transistor 2N6284 Complementary Darlington Audio Power Amplifier
Text: 2N6284 2N6287 Complementary power Darlington transistors Features • Complementary transistors in monolithic Darlington configuration ■ Integrated collector-emitter antiparallel diode Applications 1 ■ Audio power amplifier ■ DC-AC converter ■ General purpose switching applications
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2N6284
2N6287
2N6284
2N6287.
2N6287
amplifier transistor 2N6284
Complementary Darlington Audio Power Amplifier
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2N3055
Abstract: hfe 2n3055 2N3055 ST 2N3055 schematic diagram MJ2955 ST 2N3055 2N3055 MJ2955 2n3055 audio amplifier mj2955 TO-3 2n3055 amplifier
Text: 2N3055 MJ2955 Complementary power transistors Features • Low collector-emitter saturation voltage ■ Complementary NPN - PNP transistors Applications ■ General purpose ■ Audio Amplifier 1 2 Description The devices are manufactured in epitaxial-base
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2N3055
MJ2955
2N3055
JESD97.
hfe 2n3055
2N3055 ST
2N3055 schematic diagram
MJ2955
ST 2N3055
2N3055 MJ2955
2n3055 audio amplifier
mj2955 TO-3
2n3055 amplifier
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BU931P
Abstract: BU931 BU931T JESD97
Text: BU931 BU931P, BU931T High voltage ignition coil driver NPN power Darlington transistors Features • Very rugged Bipolar technology ■ High operating junction temperature ■ Wide range of packages Applications ■ 1 2 2 1 TO-247 Description The devices are bipolar Darlington transistors
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BU931
BU931P,
BU931T
O-247
O-220
BU931P
BU931
BU931T
JESD97
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2N3055
Abstract: 2n3055 malaysia MJ2955 2n3055 audio 2N3055 schematic diagram 2N3055 ST st 2n3055 2N3055 MJ2955 2N3055 JAPAN 2N3055/MJ2955
Text: 2N3055 MJ2955 Complementary power transistors Features • Low collector-emitter saturation voltage ■ Complementary NPN - PNP transistors Applications ■ General purpose ■ Audio Amplifier 1 2 Description The devices are manufactured in epitaxial-base
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2N3055
MJ2955
2N3055
2n3055 malaysia
MJ2955
2n3055 audio
2N3055 schematic diagram
2N3055 ST
st 2n3055
2N3055 MJ2955
2N3055 JAPAN
2N3055/MJ2955
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2ST2121
Abstract: 2ST5949 high power bipolar transistor selection st marking code JESD97
Text: 2ST5949 High power NPN epitaxial planar bipolar transistor Features • High breakdown voltage VCEO = 250 V ■ Complementary to 2ST2121 ■ Fast-switching speed ■ Typical ft = 25 MHz ■ Fully characterized at 125 oC 1 Applications ■ 2 Audio power amplifier
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2ST5949
2ST2121
2ST2121
2ST5949
high power bipolar transistor selection
st marking code
JESD97
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Untitled
Abstract: No abstract text available
Text: BU931 BU931P, BU931T High voltage ignition coil driver NPN power Darlington transistors Features • Very rugged Bipolar technology ■ High operating junction temperature ■ Wide range of packages TAB TAB Application ■ 1 2 High ruggedness electronic ignitions
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BU931
BU931P,
BU931T
O-247
O-220
BU931
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2st5949
Abstract: 2ST2121 JESD97
Text: 2ST2121 High power PNP epitaxial planar bipolar transistor Features • High breakdown voltage VCEO = -250 V ■ Complementary to 2ST5949 ■ Typical ft = 25 MHz ■ Fully characterized at 125 oC Applications ■ 1 2 Audio power amplifier TO-3 Description
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2ST2121
2ST5949
2st5949
2ST2121
JESD97
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ignition coil bu941
Abstract: JESD97 BU941 BU941P 0015923C High voltage ignition coil driver bu941 ignition for bipolar junction diode used for
Text: BU941 BU941P High voltage ignition coil driver NPN power Darlington transistors Features • Very rugged Bipolar technology ■ High operating junction temperature ■ Integrated antiparallel collector-emitter diode Applications ■ 1 3 2 High ruggedness electronic ignitions
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BU941
BU941P
O-247
BU94nts,
JESD97.
BU941,
ignition coil bu941
JESD97
BU941
BU941P
0015923C
High voltage ignition coil driver
bu941 ignition
for bipolar junction diode used for
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ignition coil bu941
Abstract: BU941P bu941 JESD97
Text: BU941 BU941P High voltage ignition coil driver NPN power Darlington transistors Features • Very rugged Bipolar technology ■ High operating junction temperature ■ Integrated antiparallel collector-emitter diode Applications ■ 1 3 2 High ruggedness electronic ignitions
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BU941
BU941P
O-247
BU94and
ignition coil bu941
BU941P
bu941
JESD97
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2ST2121
Abstract: 2ST5949 JESD97
Text: 2ST2121 High power PNP epitaxial planar bipolar transistor Preliminary data Features • High breakdown voltage VCEO = 250 V ■ Complementary to 2ST5949 ■ Fast switching speed ■ Typical ft = 25 MHz ■ Fully characterized at 125 oC 1 Applications ■
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2ST2121
2ST5949
2ST2121
2ST5949
JESD97
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BU931 ST
Abstract: BU931P BU931 bu931 equivalent BU931T
Text: BU931 BU931P, BU931T High voltage ignition coil driver NPN power Darlington transistors Features • Very rugged Bipolar technology ■ High operating junction temperature ■ Wide range of packages TAB TAB Application ■ 1 2 2 The devices are bipolar Darlington transistors
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BU931
BU931P,
BU931T
O-247
O-220
BU931 ST
BU931P
BU931
bu931 equivalent
BU931T
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0015923C
Abstract: 2ST2121 2ST5949 JESD97
Text: 2ST5949 High power NPN epitaxial planar bipolar transistor Features • High breakdown voltage VCEO = 250 V ■ Complementary to 2ST2121 ■ Fast-switching speed ■ Typical ft = 25 MHz ■ Fully characterized at 125 oC 1 Applications ■ 2 Audio power amplifier
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2ST5949
2ST2121
0015923C
2ST2121
2ST5949
JESD97
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2N3773
Abstract: 2N3773 transistor 0015923C 2n3773 power Amplifier JESD97
Text: 2N3773 High power NPN transistor Features • High power dissipation ■ Low collector-emitter saturation voltage Description The device is a planar NPN transistor mounted in TO-3 metal case. It is intended for linear amplifiers and inductive switching applications.
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2N3773
2N3773
2N3773 transistor
0015923C
2n3773 power Amplifier
JESD97
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Untitled
Abstract: No abstract text available
Text: 2ST2121 High power PNP epitaxial planar bipolar transistor Features • High breakdown voltage VCEO = -250 V ■ Complementary to 2ST5949 ■ Typical ft = 25 MHz ■ Fully characterized at 125 oC u d 2ro P e Applications ■ s ct 1 Audio power amplifier
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2ST2121
2ST5949
2008n
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26025a
Abstract: No abstract text available
Text: ST26025A PNP power Darlington transistor Features • ■ High current monolithic Darlington configuration TAB s ct Integrated antiparallel collector-emitter diode Applications 1 u d o 2 ■ Automotive fan control ■ Linear and switching industrial equipment
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ST26025A
ST26025A
26025a
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Untitled
Abstract: No abstract text available
Text: 2N3773 High power NPN transistor Features • High power dissipation ■ Low collector-emitter saturation voltage s ct Description The device is a planar NPN transistor mounted in TO-3 metal case. It is intended for linear amplifiers and inductive switching applications.
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2N3773
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2n3773
Abstract: No abstract text available
Text: 2N3773 High power NPN transistor Features • High power dissipation ■ Low collector-emitter saturation voltage Description The device is a planar NPN transistor mounted in TO-3 metal case. It is intended for linear amplifiers and inductive switching applications.
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2N3773
2n3773
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Untitled
Abstract: No abstract text available
Text: 2N6284 2N6287 Complementary power Darlington transistors Features • Complementary transistors in monolithic Darlington configuration ■ Integrated collector-emitter antiparallel diode Applications 1 ■ Audio power amplifier ■ DC-AC converter ■ General purpose switching applications
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2N6284
2N6287
2N6284
2N6287.
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2N3773
Abstract: 2N3773 transistor 2N3773 applications 2N3773 NPN Transistor 0015923C JESD97 transistor marking SUs
Text: 2N3773 High power NPN transistor Features • High power dissipation ■ Low collector-emitter saturation voltage Description The device is a planar NPN transistor mounted in TO-3 metal case. It is intended for linear amplifiers and inductive switching applications.
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2N3773
JESD97.
0015923C
2N3773
2N3773 transistor
2N3773 applications
2N3773 NPN Transistor
0015923C
JESD97
transistor marking SUs
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ST26025A
Abstract: ST26025 st 26025a 26025a st260-25 0015923C st diode marking code TO3 ST2602 ST DARLINGTON TRANSISTOR 18031
Text: ST26025A PNP power Darlington transistor Features • ■ High current monolithic Darlington configuration TAB Integrated antiparallel collector-emitter diode Applications 1 2 ■ Automotive fan control ■ Linear and switching industrial equipment TO-3 Description
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ST26025A
ST26025A
6025A
ST26025
st 26025a
26025a
st260-25
0015923C
st diode marking code TO3
ST2602
ST DARLINGTON TRANSISTOR
18031
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