E1006
Abstract: buz67 TO-238AA QS 424
Text: ôôD D • 88D Ö 23 s b 0 s 14714 00147m D 2 «sieg 'T '- 7 ? ~ J 3 BUZ67 SIEMENS AKTIENGESELLSCHAF_ N-Channel Main ratings a 400 V Draln-source voltage I^DS = 9,6 A Continuous drain current h Draln-source on-reslstance ^DS on = 0,4 Si Description
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00147m
BUZ67
C67078-A1610-A2
fl23SbG5
E1006
buz67
TO-238AA
QS 424
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buz349
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE PowerMOS transistor ObE D • bb53T31 0014745 T ■ BUZ349 T " 31-13 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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bb53T31
BUZ349
TQ218AA;
bbS3131
T-39-13
b53131
D0147SQ
buz349
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Untitled
Abstract: No abstract text available
Text: CY7C123 rS CYPRESS 256 x 4 Static RAM Functional D escription Features • 256 x 4 static RAM for control store in high-speed computers • CMOS for optimum speed/power • High speed — 7 ns commercial — 10 ns (military) • Low power — 660 mW (commercial)
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300-mil
CY7C123
38-00060-F
DD147NÔ
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h a 431 transistor
Abstract: BUZ349 transistor buv y 431 transistor
Text: ObE D N AMER P H I L I P S / D I S C R E T E PowerMOS transistor 1^ 53^31 0014745 t BUZ3491 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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b53i3i
BUZ349
T0218AA;
T-39-13
h a 431 transistor
BUZ349
transistor buv
y 431 transistor
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DS1642
Abstract: MK48T02
Text: 0S 1642 DALLAS .Nonvolatile TimekeepingDS1642 RAM s e m ic o n d u c to r PIN ASSIGNMENT FEATURES • Form, fit, and function compatible with the M K48T02 Timekeeping RAM A7C 1 24 □ Vcc A6 Q 2 23 □ A8 A5 Q 3 22 □ A9 A4 Q 4 21 □ WE A3 C 5 20 □ ÔË
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DS1642
MK48T02
DS1642
24-PIN
24-PIN
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