Untitled
Abstract: No abstract text available
Text: SAM S UN G E L E C T R O N I C S INC b4E » • 7^4142 KMM581020AN GG14454 455 ■ SM6K DRAM MODULES 1 M x 8 DRAM SIMM Memory Module with Low Power GENERAL DESCRIPTION FEATURES • Performance range: KMM581020AN-7 • • • » • • • tiuc tcAc I rc
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KMM581020AN
GG14454
KMM581020AN-7
130ns
KMM581020AN-8
150ns
KMM581020AN-10
100ns
180ns
cycles/128ms
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Untitled
Abstract: No abstract text available
Text: PowerMOS transistor_ BUZ72 N AMER PHILIPS/DISCRETE ObE D _ • bb53T31 0014430 7 ■ L r - 3 ^ - 1 1 May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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BUZ72
bb53T31
O220AB;
T-39-11
bbS3T31
0D14435
bt53T31
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BUZ72
Abstract: V103 TRANSISTOR V103 F5101
Text: PowerMOS transistor N AMER PHILIPS/DISCRETE BUZ72 ObE D • ^53^31 ~ 0014430 7 . T - 3*7-1 May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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BUZ72
bbS3T31
7zms71j
bfci53cÃ
001443b
T-39-11
BUZ72
V103 TRANSISTOR
V103
F5101
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