Untitled
Abstract: No abstract text available
Text: CPH3307 P- Channel Silicon MOS FET Very High-Speed Switching Applications TENTATIVE Features and Applications • Low ON-state resistance. • Very high-speed switching. • 2.5V drive. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage
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PDF
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CPH3307
--10V
--10V,
000719TM2fXHD
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Untitled
Abstract: No abstract text available
Text: CPH3409 N- Channel Silicon MOS FET Very High-Speed Switching Applications TENTATIVE Features and Applications • Low ON-state resistance. • Very high-speed switching. • 2.5V drive. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage
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Original
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PDF
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CPH3409
000719TM2fXHD
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Untitled
Abstract: No abstract text available
Text: CPH3308 P- Channel Silicon MOS FET Very High-Speed Switching Applications TENTATIVE Features and Applications • Low ON-state resistance. • Very high-speed switching. • 2.5V drive. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage
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Original
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PDF
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CPH3308
--10V
--10V,
CPH3307
000719TM2fXHD
|
MARKING KG
Abstract: No abstract text available
Text: CPH3407 N- Channel Silicon MOS FET Very High-Speed Switching Applications TENTATIVE Features and Applications • Low ON-state resistance. • Very high-speed switching. • 2.5V drive. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage
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Original
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PDF
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CPH3407
000719TM2fXHD
MARKING KG
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Untitled
Abstract: No abstract text available
Text: CPH3408 N- Channel Silicon MOS FET Very High-Speed Switching Applications TENTATIVE Features and Applications • Low ON-state resistance. • Very high-speed switching. •4V drive. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage
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Original
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PDF
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CPH3408
000719TM2fXHD
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