Untitled
Abstract: No abstract text available
Text: PCB Mounted Receptacles 2.00 x 2.00 mm 0.079 x 0.079 in. Description Bottom-Entry, Surface-Mount Part Number 91596 Without Locating Post 0 .9 7 mm <0.038 in .) •DIM B 0 .9 6 mm _ <0.038 in .) ■DIM A - - D IM A 2 .2 5 m m T Y P (0 .0 8 9 in .) i n n n i
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GES-12-008
00023b4
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Untitled
Abstract: No abstract text available
Text: ‘H Y U N D A I HY534256A Series 256KX 4-bit CMOS DRAM DESCRIPTION The HY534256A is the 2nd generation and fast dynamic RAM organized 262,144 x 4-bit. The HY534256A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating
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HY534256A
256KX
300mil
100BSC
300BSC
3-11dÂ
1AB06-10
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Abstract: No abstract text available
Text: THYRISTOR MODULE PK pd,pe,kk 55F Power Thyristor/Diode Module P K 55F series are designed for various rectifier circuits and power controls. For your circuit application, following internal connections and wide voltage rat ings up to 1,600 V are available. High precision 25 mm (linch)
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PK55F-80
PD55F-80
PK55F-120
PD55F-120
PE55F-40
KK55F-40
PK55F-160
PK55F-40
B-207
7TT1243
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Untitled
Abstract: No abstract text available
Text: * SY10422-3/4/5/7 SY100422-3/4/517 SY101422-3/4/5/7 SY101M422-5/7 256 x 4 ECL RAM SYNERGY SEMICONDUCTOR DESCRIPTION FEATURES The Synergy S Y10/100/101422 are 1024-bit Random Access Memories RAMs , designed with advanced Emitter Coupled Logic (ECL) circuitry. The devices are organized
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SY10422-3/4/5/7
SY100422-3/4/5
SY101422-3/4/5/7
SY101M422-5/7
Y10/100/101422
1024-bit
256-words-by-4-bits
10K/100K
SY101422
SY10/100/101422
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Untitled
Abstract: No abstract text available
Text: IBM11M1730B 1M X 72 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • 1Mx72 Fast Page Mode DIMM • Performance: -60 -70 Wc RAS Access Time 60ns 70ns tcAC CAS Access Time 20ns 25ns w Access Time From Address 35ns 40ns tRC
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IBM11M1730B
1Mx72
110ns
130ns
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Untitled
Abstract: No abstract text available
Text: •LOW CURRENT LED The following are low current, super bright LEDs. Due to being low-current-driven types, these LEDs are suitable for use in batterydriven products such as audio visual, office automation equipment, etc. ▼CHARACTERISTICS BY COLOR r Absolute M a /rn :rn h a tim 1;
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00023b4
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Y 2f
Abstract: No abstract text available
Text: SILICON SYSTEMS INC 11E D ÔHSBibS 0Q0B3bl 1 • SSI 32R515/515R ¿éconâjskm s 9 , 10-Channel Ferrite/MIG Read/Write Device " T S Z -3 3 » - I July, 1989 DESCRIPTION FEATURES The S S I 32R515 is a bipolar monolithic integrated cir cuit designed for use with center-tapped ferrite or MIG
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32R515/515R
32R515
32R515R
32R515M
32R515RM
10-Channel
Y 2f
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