AV191003C940N
Abstract: AV021003C940N AV1003
Text: t ILE b3MbSD2 000151b 2b=i FEATURES Contact ratings: 2 A at 48 VDC max. resistive load Initial contact resistance: 10 milliohms max. at 1 A, 2 V Insulation resistance: 1000 megohms min. at 500 VDC Dielectric strength: 4000 V rms min. between terms. & • .755" (19 mm) dia. and .866" (22 mm) dia. models.
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opti248
AV021003C940N
AV191003C940N
AV021003C940N
AV1003
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Untitled
Abstract: No abstract text available
Text: CERMETEK MICROELECTRONICS 3ÔE D B 2DDSÔÜ3 0G0Ì212 b M C E R CH1814, CH1828 and CH1830 International Telephone Line Interface Modules 'T ' 7 S ^ -°S INTRODUCTION FEATURES Products that are designed to connect directly to the telephone line such as modems, FAX m achines or automated voice pro
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CH1814,
CH1828
CH1830
CH1828
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Untitled
Abstract: No abstract text available
Text: im m = nil SEME IRFN250 LAB MECHANICAL DATA Dimensions in mm inches N-CHANNEL POWER MOSFET 11.5 2.0 3.5 3.5 200V V Dss 0.25 14A 0.1 OOO ^D(cont) 3.0 ^DS(on) i5 FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE • SMALL FOOTPRINT - EFFICIENT USE OF
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IRFN250
220SM
00A/M-S
300ms,
A1331B7
000151b
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MPS 1005
Abstract: DB10 MP574A MP674JN MP674JP MP674JS MP674KN MP674KP MP674KS MICRO POWER SYSTEMS
Text: MICRO PO WE R S Y S T E M S INC blE ]> • bOT7444 0004544 4flfi B M P S —£i-! -iz- MP674 Complete 12-Bit, 12 |is Anaiog-to-Digital Converter with Microprocessor Interface M Micro Power Systems FEATURES • • • • • • Complete 12-Bit A/D Converter with Reference
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12-Bit
16-Bit
MP674
12-Bit,
MP574A
DB11-DB0
MPS 1005
DB10
MP574A
MP674JN
MP674JP
MP674JS
MP674KN
MP674KP
MP674KS
MICRO POWER SYSTEMS
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NE99532
Abstract: 2sc3358 NE3005B20 NE85637 NE4201 NE1010E 2SC3358 transistor ne3005b-20 NE1005E NEC 8563
Text: NEC/ CALIFORNIA 1SE D bMs?m4 D D o m a i a T IM S - T - it- t r NEC NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES T'3h21 FEATURES DESCRIPTION AND APPLICATIONS • H IG H G A IN B A N D W ID T H P R O D U C T : f r = 7 G H z The NE856 series of NPN epitaxial silicon transistors Is de
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NE856
NE99532
NE32700
NE32702
NE32708
NE32740A
NE32740B
2sc3358
NE3005B20
NE85637
NE4201
NE1010E
2SC3358 transistor
ne3005b-20
NE1005E
NEC 8563
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MBM27C1000-20
Abstract: No abstract text available
Text: FUJITSU MICROELECTRONICS F U J IT S U 374=!7b2 OOCHEIO b 23E D CMOai.048,576.BI UV ERASABLE REAI ONLY MEMOR MBM27C1000-15 MBM27C1000-20 MBM27C1000-25 April 1988 Edition 2.0 CMOS 1,048,576 BIT UV ERASABLE READ ONLY MEMORY EPROM The Fujitsu MBM27C1000 EPROM Is a high speed read-only static mem ory th a t Is
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MBM27C1000-15
MBM27C1000-20
MBM27C1000-25
MBM27C1000
072-byte
32-pln
36-pad
15-to-21
MBM27C1000-20
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Z89COO
Abstract: No abstract text available
Text: PRELIMINARY PRODUCT SPECIFICATION Z89C00 1 6 -B it D ig it a l S ig n a l p r o c e s s o r FEATURES • 16-Bit Single Cycle Instructions ■ 16-Bit I/O Port ■ Zero Overhead Hardware Looping ■ 4K Words of On-Chip Masked ROM ■ 16-Bit Data ■ Three Vectored Interrupts
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Z89C00
16-Bit
24-Bit
Z89C00
16-bit,
68-pin
Z89C001OVSC
Z89COO
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NN511662
Abstract: No abstract text available
Text: NN511662 series EDO Hyper Page Mode CMOS 64Kx 16bit Dynamic RAM NPN/A> DESCRIPTION The NN511662 series is a high performance CMOS Dynamic Random Access Memory organized as 65,536 words by 16 bits. The NN511662 series is fabricated with advanced CMOS technology and designed with innovative design tech
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NN511662
16bit
NN511662L
G0Q153Ö
NNS11662
NN511662XX
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XTAL78
Abstract: QDD1443 Z86C95 tda 2022 P2M SCR Z86C9524VSC
Text: P r e l im in a r y P r o d u c t S p e c if ic a t io n Z86C95 CMOS Z8 S ig n a l DIGITAL p r o c e s s o r _ FEATURES • Complete Microcontroller, 16 I/O Lines, and up to 64 Kbytes of Addressable External Space Each for Program and Data Memory
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Z86C95
16-Bit
256-ByteRegisterFile,
84-pin
Z86C9524VSC
80-pin
Z86C9524FSC
100-pin
XTAL78
QDD1443
Z86C95
tda 2022
P2M SCR
Z86C9524VSC
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A01 monolithic amplifier
Abstract: A02 monolithic amplifier CCD LINEAR SENSOR 512 CCD linear array A03 monolithic amplifier CCD412A Loral linear image sensor transparent substrate Contact image sensor fairchild
Text: LDRAL Fairchild Im aging Sensors C C D 4 1 2 A 512 x 512 Element Full Frame Image SenSOf FEATURES • 512 x 512 Photosite Array ■ 1£^m x 1£pim Pixel ■ 7.68mm x 7.68 mm Image Area ■ 100% Fill Factor ■ Multi-Pinned Phase MPP Option ■ Readout Noise Less Than 7 Electrons at 250k pixels/ sec
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CCD412A
CCD412A
A01 monolithic amplifier
A02 monolithic amplifier
CCD LINEAR SENSOR 512
CCD linear array
A03 monolithic amplifier
Loral
linear image sensor transparent substrate
Contact image sensor fairchild
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Untitled
Abstract: No abstract text available
Text: NN511662 series EDO Hyper Page Mode CMOS 64K x 16bit Dynamic RAM N PN > a< DESCRIPTION The NN511662 series is a high performance CMOS Dynamic Random Access Memory organized as 65,536 words by 16 bits. The NN511662 series is fabricated with advanced CMOS technology and designed with innovative design tech
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NN511662
16bit
NN511662L
00Q153fl
NNS11662
NN511662XX
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Untitled
Abstract: No abstract text available
Text: July, 1994 INC. Industrial TM PA7128I PEEL Array Programmable Electrically Erasable Logic Array Features I Industrial Grade Specifications - Vcc = 4.5V to 5.5V, TA = -40 to +85=C - Reprogrammable 28-pin DIP, SOIC, and 28-pin PLCC packages • High-Speed, Moderate Power Consumption
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PA7128I
28-pin
12ns/20ns
105mA
10-bit
000151e
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it27
Abstract: Fairchild Imaging Fairchild Imaging CCD Contact image sensor fairchild
Text: LDRAL Fairchild Imaging Sensors CCD412A 512 x 512 Element Full Frame Image Sensor FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ 512 x 512 Photosite Array 1{ÿim x 1£pm Pixel 7.68mm x 7.68 mm Image Area 100% Fill Factor Multi-Pinned Phase MPP Option Readout Noise Less Than 7 Electrons at 250k pixels/sec
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CCD412A
15t/m.
400nm.
it27
Fairchild Imaging
Fairchild Imaging CCD
Contact image sensor fairchild
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VTR17D1
Abstract: No abstract text available
Text: Reflective Optoswitch VTR17D1, 17E1 Arrow Retro with Flying Leads PRODUCT DESCRIPTION This series of reflective optical switches com bines an infrared emitting diode IRED with an NPN phototransistor (VTR17D 1) or photodarlington (VTR 17E1) in a one piece, sealed, IR
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VTR17D1,
VTR17D
VTR16xx
VTR17D1
VTR17E1.
VTR17E1
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POTTER eotz-240d15
Abstract: ICS-1-109 rma 16 relay EOTZ-240D15 240D25 EOMZ-240D15 EOTZ-240D15R EOMZ-240D25R Potter E22575 32 amp
Text: POTTER & BRUMFIELD S3E D • û23b31E DDDISIS 7ST « S I E C NEW 25 AMP MODEL AVAILABLE E O M Z / E O T Z SIEMENS/ POTTER/BRUMFIELD seríes7 0 ^' 0.02 to 25 AMP LOW-COST SOLID STATE AC RELAY ^ File E22575 & E29244 <IB File LR15734 EOMZ FEATURES ENG INEERING DATA
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32VDC
280VAC
LR15734.
E22575
E29244
26A945
POTTER eotz-240d15
ICS-1-109
rma 16 relay
EOTZ-240D15
240D25
EOMZ-240D15
EOTZ-240D15R
EOMZ-240D25R
Potter
E22575 32 amp
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G001S
Abstract: No abstract text available
Text: H igh Perform ance 256K.X 16 CMOS DRAM H AS4C256K16F0 A Hiah Speed 2S6KX16 CMOS DRAM Fast pane mode Preliminary information Features • O rg a n iz a tio n : 2 6 2 ,1 4 4 w o r d s b y 16 b its • R e a d -m o d ify -w rite • H ig h sp e ed - 5 0 /6 0 ns RAS access tim e
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AS4C256K16F0
2S6KX16
4C256K16F0-50)
40-pin
S4CZ56K16F0-60JC
16F0-50TC
l-30002-A.
G001S
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suzuki DT4
Abstract: fd 20049 pc 525 R300F TXC-03303-MB DS200F3 llb10 dt28 mod 4 counter SU-210
Text: M 13E D e vice DS3/DS1 MUX/DEMUX, Extended Features TXC-03303 DATA SHEET Preliminary • Multiplexes/demultiplexes 28 DS1 signals into a DS3 signal. • M13 or C-bit parity mode operation • FEBE, C, or P-bit parity error insertion capability • DS3 idle signal generators
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TXC-03303
TXC-03303-MB
10DH152
0001S25
suzuki DT4
fd 20049
pc 525
R300F
TXC-03303-MB
DS200F3
llb10
dt28
mod 4 counter
SU-210
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32T52
Abstract: No abstract text available
Text: Æ \W M Ü E 1 D D M lF @ ^ lM ]^ ir D © l M I M X29L81 OOT/B C FE A TU R E S B M -B IT [1 M / 5 1 2 K x 8 / x 1 B ] C M O S S IN G L E V O L T A G E 3 V O N L Y F L A S H E E P R O M • Extended single-supply voltage range 2.7V to 3.6V for read and write
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X29L81
Bytes/64
48-Lead
MX29L81
-100mA
100mA
00153b
32T52
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WB6S
Abstract: Cordless Phone system block diagram AXOV
Text: W9320 Winbond Electronics Corp. ADPCM CODEC Table o f Contents1. GENERAL DESCRIPTION. 2 2.
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W9320
W9320
Figure12-2
28-Lead
DDD153b
WB6S
Cordless Phone system block diagram
AXOV
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NEC D765
Abstract: 8272 floppy disk controller block diagram of 8272 floppy disk controller 82C226 8272A floppy disk controller block diagram NEC uPA 63 H floppy disk controller 8272 CHIPS TECHNOLOGIES MR 250-2.-5 NS16550
Text: CH I P S . im a £ TE C H N O L O G I E S INC 12E D | SO'ìflllb 0 0 0 1501 b | u u u m .,u iu C H I ir ^ S -T -5 2 -3 3 -D 5 82C607 M ultifunction Controller Single Chip UART and Analog Data Separator
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T-52-33-D5
82C607
NS16550
precompens82C607
NEC D765
8272 floppy disk controller
block diagram of 8272 floppy disk controller
82C226
8272A floppy disk controller block diagram
NEC uPA 63 H
floppy disk controller 8272
CHIPS TECHNOLOGIES
MR 250-2.-5
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