SDWL2520
Abstract: SDWL3225 SDWL2520F SDWL3225F100J SDWL3225F120J SAR 2205
Text: Chequers Electronic China Limited Wire Wound Chip Ferrite Inductor (SDWL-F Series) ● Dimension SDWL-F C D A Type A B C D SDWL2520 [1008] 2.5±0.2 [.098±.008] 2.0±0.2 [.079±.008] 1.8±0.2 [.071±.008] 1.4±0.1 [.055±.004] SDWL3225 [1210] 3.2±0.2 [.126±.008]
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SDWL3225
SDWL4532
SDWL2520
SDWL4532F391K
SDWL4532F471K
SDWL4532F561K
SDWL4532F681K
SDWL4532F821K
SDWL4532F102K
SDWL2520
SDWL3225
SDWL2520F
SDWL3225F100J
SDWL3225F120J
SAR 2205
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SICK WL 25 123
Abstract: SICK 30 fgs sick 14 fgs sick DS 50 sick optic typ WL 9 sick wl 170 sick WL 14 p 430 Sensick Sensors DT 500 AD-LL-2M2 Sensick ds 60
Text: ground suppression, ASI interface, fibre-optic cable versions, insensitivity to ambient light and mutual interference when units are installed close together, are all device standards. The WL 12 G “glass photoelectric switch” designed for filling systems used in the beverage industry, represents more than just a
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TPV3100
Abstract: TP3024A HF power amplifier TPV3100 PT9783 MRF466 mrf4070 tp9383 tp2304 mrf433 MRF492A
Text: TABLE OF CONTENTS INTRODUCTION iii GENERAL INFORMATION iv QUALITY ASSURANCE & RELIABILITY v PRODUCT INDEX Alphanumeric vi RF POWER TRANSISTORS ! ! ! ! ! ! ! ! ! ! ! HF SSB HF MOSFETS VHF VHF & UHF MOSFETS UHF UHF MILITARY PULSED AVIONICS PULSED RADAR CW MICROWAVE
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twF150-50F
HF150-50S
HF250-50
HF100-28
HF220-28
HF220-50
TVU014
HF75-50S
ASAT25
ASI4003
TPV3100
TP3024A
HF power amplifier TPV3100
PT9783
MRF466
mrf4070
tp9383
tp2304
mrf433
MRF492A
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Untitled
Abstract: No abstract text available
Text: FR801S Thru FR807S Fast Recovery Rectifiers .190 MAX 4.82 3.8 0.1 .130 (3.3) .100 (2.54) .401 (10.2) .386 (9.8) .055 (1.4) .043 (1.1) .230 (5.85) MIN .037 (0.68) .015 (0.38) .624 (15.87) MAX 0.04 M I X (1.0) .500 (12.7) MIN .051 (1.3) MAX .250 (6.35) MAX
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FR801S
FR807S
O-220AC
2002/95/EC
O-220AC
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Untitled
Abstract: No abstract text available
Text: SF81S thru SF88S 3.8 0.1 .130 3.3 .100 (2.54) .401 (10.2) .386 (9.8) Super Fast Recovery Rectifiers .190 MAX (4.82) .055 (1.4) .043 (1.1) .230 (5.85) MIN .037 (0.68) .015 (0.38) .624 (15.87) MAX 0.04 M I X (1.0) .500 (12.7) MIN .051 (1.3) MAX .250 (6.35)
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SF81S
SF88S
O-220AC
2002/95/EC
O-220AC
Fre75
SF84S
SF85S
SF86S
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information IXTA130N10T IXTP130N10T TrenchMVTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 100 V = 130 A Ω ≤ 8.5 mΩ TO-263 (IXTA) G S (TAB) Symbol Test Conditions Maximum Ratings V DSS VDGR TJ = 25°C to 175°C
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IXTA130N10T
IXTP130N10T
O-263
O-220)
O-220
O-263
130N10T
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SF1004C
Abstract: SF1006C SF1005C
Text: SF1001C thru SF1008C Super Fast Recovery Rectifiers Glass Passivation Junction .189 4.82 .0 055(1.4) .0 043(1.1) .014(0.36) .1(2.54) .129(3.3) .153(3.9) .145(3.7) .026(0.68) .173(4.4) .403(10.26) .385(9.8) .251(6.4) .228(5.8) .624(15.87) .057(1.45) .046(1.16)
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SF1001C
SF1008C
O-220AB
2002/95/EC
25Vdc
SF1004C
SF1006C
SF1005C
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ES2J
Abstract: 1000C 2f j
Text: ES2A thru ES2J SURFACE MOUNT SUPERFAST RECTIFIER VOLTAGE - 50 TO 600 VOLTS CURRENT - 2.0 AMPERES SMA/DO-214AC .055 1.40 .062(1.60) .098(2.50) .114(2.90) .157(4.00) .181(4.60) .006(.152) .012(.305) .078(2.00) .096(2.44) .030(0.76) .060(1.52) .004(.102) .008(.203)
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SMA/DO-214AC
260oC/10seconds
50Vdc
m22pf
10nsmax
50ohms
5/10ns
ES2J
1000C
2f j
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1602C
Abstract: HER1601-05 1604C 1603C
Text: HER1601-05 HIGH EFFICIENCY RECTIFIER VOLTAGE RANGE CURRENT FEATURES 50 to 400Volts 16 Amperes Low power loss,high efiiciency. Low leakage. .190 MAX 4.82 .401(10.2) .386(9.8) High speed switching. TO-220 _ 0.1 3.8 + .055(1.4) .043(1.1) High current capability.
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HER1601-05
400Volts
O-220
UL94V-0
50mVp-p
50/100ns/cm
1602C
HER1601-05
1604C
1603C
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1000C
Abstract: No abstract text available
Text: ES2AA thru ES2JA SURFACE MOUNT SUPERFAST RECTIFIER VOLTAGE - 50 TO 600 VOLTS CURRENT - 2.0 AMPERES SMA/DO-214AC .055 1.40 .062(1.60) .098(2.50) .114(2.90) .157(4.00) .181(4.60) .006(.152) .012(.305) .078(2.00) .096(2.44) .030(0.76) .060(1.52) .004(.102) .008(.203)
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SMA/DO-214AC
260oC/10seconds
50Vdc
m22pf
10nsmax
50ohms
5/10ns
1000C
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1602C
Abstract: HER1605C HER1601C
Text: HER1601C THRU HER1605C HIGH EFFICIENCY RECTIFIER VOLTAGE RANGE CURRENT FEATURES 50 to 400Volts 16 Amperes Low power loss,high efiiciency. Low leakage. .190 MAX 4.82 .401(10.2) .386(9.8) High speed switching. TO-220 _ 0.1 3.8 + .055(1.4) .043(1.1) High current capability.
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HER1601C
HER1605C
400Volts
O-220
UL94V-0
50mVp-p
50/100ns/cm
1602C
HER1605C
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130N10T
Abstract: 130n10 IXTP130N10
Text: Preliminary Technical Information IXTH130N10T IXTQ130N10T TrenchMVTM Power MOSFET VDSS ID25 RDS on = 100 V = 130 A Ω ≤ 8.5 mΩ TO-247 (IXTH) N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ
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IXTH130N10T
IXTQ130N10T
O-247
130N10T
130N10T
130n10
IXTP130N10
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IXTP130N10T
Abstract: IXTA130N10T IXTP130N10 130n10 S5080
Text: TrenchMVTM Power MOSFET IXTA130N10T IXTP130N10T VDSS ID25 = = 100V 130A Ω 9.1mΩ RDS on ≤ N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ
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IXTA130N10T
IXTP130N10T
O-263
130N10T
9-08-A
IXTP130N10T
IXTA130N10T
IXTP130N10
130n10
S5080
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Untitled
Abstract: No abstract text available
Text: TrenchMVTM Power MOSFET IXTA130N10T IXTP130N10T VDSS ID25 = = 100V 130A Ω 9.1mΩ RDS on ≤ N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ
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IXTA130N10T
IXTP130N10T
O-263
130N10T
9-08-A
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1607G
Abstract: SFA1608 1602G 1603G 1604G 1606G SFA1601G SFA1608G
Text: SFA1601G - SFA1608G 16.0 AMPS. Glass Passivated Super Fast Rectifiers TO-220AC .185 4.70 .175(4.44) .412(10.5) MAX .113(2.87) .103(2.62) Features .055(1.40) .045(1.14) DIA .154(3.91) .148(3.74) .27(6.86) .23(5.84) .594(15.1) .587(14.9) High efficiency, low VF
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SFA1601G
SFA1608G
O-220AC
O-220AC
50Vdc
1607G
SFA1608
1602G
1603G
1604G
1606G
SFA1608G
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APT10026JN
Abstract: apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR
Text: 1999 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on
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MIL-PRF-19500
ISO9001
APT10026JN
apt1004rbn
APT10050JN
FREDFETs
APT8030jn
APT4020BN
APT5010LVFR
APT5014LVR
arf444
APT10M09LVR
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ana 650 DIP 8
Abstract: HV04
Text: High Voltage DIP Leaded HV Style U.S. Preferred Styles C0G Dielectric N1500 X7R Dielectric General Specifications General Specifications General Specifications Capacitance Range 100 pF to 1.2 µF (25°C, 1.0±0.2 Vrms (open circuit voltage) at 1 KHz, for ≤100 pF use 1 MHz)
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N1500
AN650
ana 650 DIP 8
HV04
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Untitled
Abstract: No abstract text available
Text: High Voltage DIP Leaded HV Style U.S. Preferred Styles C0G Dielectric N1500 X7R Dielectric General Specifications General Specifications General Specifications Capacitance Range 100 pF to 1.2 µF (25°C, 1.0±0.2 Vrms (open circuit voltage) at 1 KHz, for ≤100 pF use 1 MHz)
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N1500
AN650
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101 2KV
Abstract: X7R 1KV AN240 capacitor 270 2kv hv 102 AN120 HV03 HV05 N1500
Text: High Voltage DIP Leaded HV Style U.S. Preferred Styles C0G Dielectric N1500 X7R Dielectric General Specifications General Specifications General Specifications Capacitance Range 100 pF to 1.2 µF (25°C, 1.0±0.2 Vrms (open circuit voltage) at 1 KHz, for ≤100 pF use 1 MHz)
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N1500
AN650
101 2KV
X7R 1KV
AN240
capacitor 270 2kv
hv 102
AN120
HV03
HV05
N1500
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Untitled
Abstract: No abstract text available
Text: Package Number 124 - EMI Shield - M IN. M AX. 1.320 1.380 1.320 1.380 .350 450 .040 ' 060 .600 700 .01 5 025 1 .1 8 0 ' .280 .150 ' 250 .150 250 .015 055 .130 230 M IL L IM E T E R S IN C H E S _ M AX. M AX. M IL L IM E T E R S M IN. I M AX. 3 3 .5 3 3 5.05
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ZZ124
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Untitled
Abstract: No abstract text available
Text: 12 13 11 10 OPTIONAL PICK AND P LA C E CAP ii I— 1 M±0.15 l.5 8 ± 0 .0 5 SEE NOTES 4 & 9. lA y A , m M x 2 IBI |Q [Ç lA Ç y 6. IQ .2 4 0 V .4 2 0 Ì V I REF. P.C. BOARD PAD LAYOUT AT ENDS FOR NO PEG VERSION. PEG OPTIONS 3.30 .130 1.40 REF. .055 R E F .-,
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SD-71308-001
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VE09 2750
Abstract: VE07 2750 varistors ve07 2750 ve17 2750 0461K VE07 0600 ve09 0151 varistors ve09 2750 varistors ve07 VE17 0251
Text: THOMSON COMPONENTS THOMSON PASSIVE 4hE D • T0EÔ3QS D0003ÔÔ b ■THP VE SERIES EPOXY DIPPED ZINC OXIDE VARISTORS r-/;-z5 DIMENSIONS TYPE D max. mm ins. H max. mm ins. +10% -0.05 mm ins. E +0.8 mm ins. VE07 7 .276 10 .394 0.6 .024 5.08 .200 VE09 9 .354
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DD003Ã
E84108
175VRMS
VE13S
VE09 2750
VE07 2750
varistors ve07 2750
ve17 2750
0461K
VE07 0600
ve09 0151
varistors ve09 2750
varistors ve07
VE17 0251
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Untitled
Abstract: No abstract text available
Text: Pulse and High-Frequency, Radial-Leaded Polypropylene Capacitors Types DPP, DPPS, DPFF, DPPM, DPMF Highlights-Type DPP is standard film/foil construction. Types DPPS and DPFF are series-wound extended foil with a floating common foil for 800 Vdc and up.
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Untitled
Abstract: No abstract text available
Text: Pulse and High-Frequency, Radial-Leaded Polypropylene Capacitors Types DPP, DPPS, DPFF, DPPM, DPMF Highlights-Type DPP is standard film/foil construction. Types DPPS and DPFF are series-wound extended foil with a floating common foil for 800 Vdc and up.
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