SICK WL 25 123
Abstract: SICK 30 fgs sick 14 fgs sick DS 50 sick optic typ WL 9 sick wl 170 sick WL 14 p 430 Sensick Sensors DT 500 AD-LL-2M2 Sensick ds 60
Text: ground suppression, ASI interface, fibre-optic cable versions, insensitivity to ambient light and mutual interference when units are installed close together, are all device standards. The WL 12 G “glass photoelectric switch” designed for filling systems used in the beverage industry, represents more than just a
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Abstract: No abstract text available
Text: Not for New Design 151 RLH www.vishay.com Vishay BCcomponents Aluminum Capacitors Radial Long-Life, High Voltage FEATURES • • • • • 044 RSH 85 ° C 151 RLH 105 °C miniaturized 152 RMH low voltage 148 RUS miniaturized APPLICATIONS • High-reliability and professional applications
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2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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RX1214B350Y
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET RX1214B350Y NPN microwave power transistor Product specification Superseded data of November 1994 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Suitable for short and medium
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RX1214B350Y
SCA53
127147/00/02/pp12
RX1214B350Y
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET RX1214B350Y NPN microwave power transistor Product specification Superseded data of November 1994 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Suitable for short and medium
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RX1214B350Y
OT439
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ana 650 DIP 8
Abstract: HV04
Text: High Voltage DIP Leaded HV Style U.S. Preferred Styles C0G Dielectric N1500 X7R Dielectric General Specifications General Specifications General Specifications Capacitance Range 100 pF to 1.2 µF (25°C, 1.0±0.2 Vrms (open circuit voltage) at 1 KHz, for ≤100 pF use 1 MHz)
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N1500
AN650
ana 650 DIP 8
HV04
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Untitled
Abstract: No abstract text available
Text: High Voltage DIP Leaded HV Style U.S. Preferred Styles C0G Dielectric N1500 X7R Dielectric General Specifications General Specifications General Specifications Capacitance Range 100 pF to 1.2 µF (25°C, 1.0±0.2 Vrms (open circuit voltage) at 1 KHz, for ≤100 pF use 1 MHz)
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N1500
AN650
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101 2KV
Abstract: X7R 1KV AN240 capacitor 270 2kv hv 102 AN120 HV03 HV05 N1500
Text: High Voltage DIP Leaded HV Style U.S. Preferred Styles C0G Dielectric N1500 X7R Dielectric General Specifications General Specifications General Specifications Capacitance Range 100 pF to 1.2 µF (25°C, 1.0±0.2 Vrms (open circuit voltage) at 1 KHz, for ≤100 pF use 1 MHz)
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N1500
AN650
101 2KV
X7R 1KV
AN240
capacitor 270 2kv
hv 102
AN120
HV03
HV05
N1500
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HV02
Abstract: No abstract text available
Text: High Voltage DIP Leaded HV Style U.S. Preferred Styles C0G Dielectric N1500 X7R Dielectric General Specifications General Specifications General Specifications Capacitance Range 100 pF to 1.2 µF (25°C, 1.0±0.2 Vrms (open circuit voltage) at 1 KHz, for ≤100 pF use 1 MHz)
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AN650
N1500
HV02
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Untitled
Abstract: No abstract text available
Text: High Voltage DIP Leaded HV Style U.S. Preferred Styles C0G Dielectric N1500 X7R Dielectric General Specifications General Specifications General Specifications Capacitance Range 100 pF to 1.2 µF (25°C, 1.0±0.2 Vrms (open circuit voltage) at 1 KHz, for ≤100 pF use 1 MHz)
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N1500
AN650
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0022 1kv
Abstract: 101 2KV 223 1KV capacitor 270 2kv HV03 140-042 AN240 HIGH VOLTAGE capacitor 4kv hv 102 AN120
Text: High Voltage DIP Leaded HV Style U.S. Preferred Styles C0G Dielectric N1500 X7R Dielectric General Specifications General Specifications General Specifications Capacitance Range 100 pF to 1.2 µF (25°C, 1.0±0.2 Vrms (open circuit voltage) at 1 KHz, for ≤100 pF use 1 MHz)
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N1500
AN650
0022 1kv
101 2KV
223 1KV
capacitor 270 2kv
HV03
140-042
AN240
HIGH VOLTAGE capacitor 4kv
hv 102
AN120
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HV04
Abstract: 102 3KV
Text: High Voltage DIP Leaded HV Style U.S. Preferred Styles C0G Dielectric N1500 X7R Dielectric Capacitance Range 100 pF to 1.2 µF (25°C, 1.0±0.2 Vrms (open circuit voltage) at 1 KHz, for ≤100 pF use 1 MHz) Capacitance Tolerances ±5%, ±10%, ±20% Operating Temperature Range
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AN650
N1500
HV04
102 3KV
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CAPACITOR 10k 3KV
Abstract: E 203 M 1KV 223 1KV AN240 AN120 HV03 HV05 N1500 HIGH VOLTAGE capacitor 4kv
Text: High Voltage DIP Leaded HV Style C0G Dielectric N1500 X7R Dielectric General Specifications General Specifications General Specifications Capacitance Range 100 pF to 1.2 F (25°C, 1.0±0.2 Vrms (open circuit voltage) at 1 KHz, for ≤100 pF use 1 MHz)
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N1500
AN650
CAPACITOR 10k 3KV
E 203 M 1KV
223 1KV
AN240
AN120
HV03
HV05
N1500
HIGH VOLTAGE capacitor 4kv
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Untitled
Abstract: No abstract text available
Text: High Voltage DIP Leaded HV Style C0G Dielectric N1500 X7R Dielectric General Specifications General Specifications General Specifications Capacitance Range 100 pF to 1.2 F (25°C, 1.0±0.2 Vrms (open circuit voltage) at 1 KHz, for ≤100 pF use 1 MHz)
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N1500
AN650
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CAPACITOR 10k 3KV
Abstract: capacitor 203 1KV E 203 M 1KV HIGH VOLTAGE capacitor 4kv capacitor 270 2kv 68 1kv AN240 hv 102 AN120 HV03
Text: High Voltage DIP Leaded HV Style C0G Dielectric N1500 X7R Dielectric General Specifications General Specifications General Specifications Capacitance Range 100 pF to 1.2 µF (25°C, 1.0±0.2 Vrms (open circuit voltage) at 1 KHz, for ≤100 pF use 1 MHz)
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N1500
AN650
CAPACITOR 10k 3KV
capacitor 203 1KV
E 203 M 1KV
HIGH VOLTAGE capacitor 4kv
capacitor 270 2kv
68 1kv
AN240
hv 102
AN120
HV03
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Abb M3AA 200
Abstract: Abb M3AA 160 Abb M3AA 100 M3BP abb M3BP 225 SMB 4 abb M2QA71M4B Abb M3AA 132 sc 2 M2BAT280 Abb M3AA 112 M2QA 315 L4B 4
Text: IEC Low Voltage Induction Motors 400 V 50 Hz Motors for all applications Making you more competitive ABB has been manufacturing motors for over 100 years. Our products are designed to be reliable, efficient and cost effective, and we can supply motors for
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BU/400V
Abb M3AA 200
Abb M3AA 160
Abb M3AA 100
M3BP abb
M3BP 225 SMB 4 abb
M2QA71M4B
Abb M3AA 132 sc 2
M2BAT280
Abb M3AA 112
M2QA 315 L4B 4
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micro-x marking code E1
Abstract: 0004E4 SOT 86 MARKING E4
Text: PACKAGE OUTLINES All dimensions in millimeters inches , except where noted. For complete package specifications, as well as chip dimensions, refer to individual product specification sheets. Drawings are not to scale. 4 .42 .265 10.7 6.73 12.39 ± 0.76 (0.488 ± 0.030)
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SSOP-28
TQFP-48
micro-x marking code E1
0004E4
SOT 86 MARKING E4
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Untitled
Abstract: No abstract text available
Text: DATA LDT, LDS SWITCHES – MOMENTARY LDT AND LATCHING (LDS) ACTION BENEFITS Absolute reliability and simple assembly Compact design with very small mounting depth Excellent price/performance ratio Suitable for front and print-mounting Good illumination Many different application fields
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Untitled
Abstract: No abstract text available
Text: DATA LDT, LDS SWITCHES – M OM ENTARY LDT AND LATCHING (LDS) ACTION BENEFITS Absolute reliability and simple assembly Compact design with very small mounting depth Excellent price/performance ratio Suitable for front and print-mounting Good illumination
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9731LED
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information BiMOSFETTM Monolithic Bipolar MOS Transistor VCES IC110 IXBK75N170 IXBX75N170 VCE sat = 1700V = 75A ≤ 3.1V TO-264 (IXBK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ
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IC110
IXBK75N170
IXBX75N170
O-264
PLUS247TM
75N170
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IXBK75N170
Abstract: IXBX75N170 IXBX 75N170 PLUS247
Text: Advance Technical Information BiMOSFETTM Monolithic Bipolar MOS Transistor IXBK75N170 IXBX75N170 VCES IC110 VCE sat = 1700V = 75A ≤ 3.1V TO-264 (IXBK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ
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IXBK75N170
IXBX75N170
IC110
O-264
75N170
IXBK75N170
IXBX75N170
IXBX 75N170
PLUS247
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ixbk75n170
Abstract: PLUS247 IXBX75N170 IXBX 75N170
Text: Preliminary Technical Information BiMOSFETTM Monolithic Bipolar MOS Transistor IXBK75N170 IXBX75N170 VCES IC110 VCE sat = 1700V = 75A ≤ 3.1V TO-264 (IXBK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ
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IXBK75N170
IXBX75N170
IC110
O-264
75N170
ixbk75n170
PLUS247
IXBX75N170
IXBX 75N170
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04B SOT363
Abstract: 35 micro-X Package MARKING CODE F
Text: PACKAGE OUTLINES All dimensions in millimeters inches , except where noted. For complete package specifications, as well as chip dimensions, refer to individual product specification sheets. Drawings are not to scale. 4 .42 .265 10.7 6.73 12.39 ± 0.76 (0.488 ± 0.030)
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HPMX-5001
SSOP-28
TQFP-32
TQFP-48
04B SOT363
35 micro-X Package MARKING CODE F
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mosfet k 2038
Abstract: TO-40-040 PCP MOSFET 2sd1851 TRANSISTOR transistor 2SA transistor 2 sa 72 2SB1205 2SC5155
Text: Produci Selection Guide by Function High-Voltage Applications Absolute maximum ratings Package Electrical characteristics T a = 2 5 t ICBO max @ VCB Type No. Page Type Drawing num ber VCBO (V ) VCEO (V ) vebo (V ) 1C (m A ) PC (m W ) A ICBOmax ( * A) VCB
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2SK2170
2SK1068
2SK1069
2SK1332
2SK2219
2SK303
2SK545
2SK771
mosfet k 2038
TO-40-040
PCP MOSFET
2sd1851 TRANSISTOR
transistor 2SA transistor 2 sa 72
2SB1205
2SC5155
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Philips electrolytic 106 screw
Abstract: STR aluminium electrolytic capacitor
Text: DISCRETE SEMICONDUCTORS RX1214B350Y NPN microwave power transistor Product specification Superseded data of November 1994 Philips Semiconductors 1997 Feb 18 PHILIPS PHILIPS Philips Semiconductors Product specification NPN microwave power transistor RX1214B350Y
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RX1214B350Y
RX1214B350Y
SCA53
127147/00/02/pp12
Philips electrolytic 106 screw
STR aluminium electrolytic capacitor
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