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    MGA-53543-TR1G

    Abstract: marking 17 sot343 SOT343 lna FR4 dielectric constant at 2.4 Ghz MGA-53543
    Text: MGA-53543 50 MHz to 6 GHz High Linear Amplifier Data Sheet Description Features Avago Technologies’s MGA-53543 is a high dynamic range low noise amplifier MMIC housed in a 4-lead SC-70 SOT343 surface mount plastic package. • Lead-free Option Available


    Original     		PDF MGA-53543 SC-70 OT343) 5989-3741EN AV02-0455EN MGA-53543-TR1G marking 17 sot343 SOT343 lna FR4 dielectric constant at 2.4 Ghz

    mga-53453

    Abstract: MGA 563 A004R MGA-53543
    Text: MGA-53543 50 MHz to 6 GHz High Linear Amplifier Data Sheet Description Features Avago Technologies’s MGA-53543 is a high dynamic range low noise amplifier MMIC housed in a 4-lead SC‑70 SOT343 surface mount plastic package. • Lead-free Option Available


    Original     		PDF MGA-53543 MGA-53543 OT343) 5989-3741EN AV02-0455EN mga-53453 MGA 563 A004R

    mga-53453

    Abstract: A004R MGA-53543 LNA marking 407
    Text: MGA-53543 50 MHz to 6 GHz High Linear Amplifier Data Sheet Description Features Avago Technologies’s MGA-53543 is a high dynamic range low noise amplifier MMIC housed in a 4-lead SC‑70 SOT343 surface mount plastic package. • Lead-free Option Available


    Original     		PDF MGA-53543 MGA-53543 OT343) 5989-3741EN AV02-0455EN mga-53453 A004R LNA marking 407

    pseudomorphic HEMT

    Abstract: TRANSISTOR c 5578 B TRANSISTOR BC 135 0604HQ FPD6836SOT343 OT343 3.5GHz BJT bc 548 transistor transistor bc 731 transistor bc 564
    Text: FPD6836SOT343 FPD6836SOT3 43 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT343 Product Description The FPD6836SOT343 is a packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a 0.25µmx750µm


    Original     		PDF FPD6836SOT343 FPD6836SOT3 OT343 FPD6836SOT343 mx750 1850MHz) 18dBm 2002/95/EC) FPD6836SOT343E FPD6836SOT343E-AG pseudomorphic HEMT TRANSISTOR c 5578 B TRANSISTOR BC 135 0604HQ OT343 3.5GHz BJT bc 548 transistor transistor bc 731 transistor bc 564

    transistor bc 564

    Abstract: bc 5578 0604HQ FPD6836SOT343 OT343 re 0603size bc 548 transistor S22m transistor BC 548 Data transistor Bc 540
    Text: FPD6836SOT343 FPD6836SOT3 43 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT NOT FOR NEW DESIGNS Package: SOT343 Features at 1850MHz     Optimum Technology Matching Applied  GaAs HBT RoHS-compliant (Directive


    Original     		PDF FPD6836SOT343 FPD6836SOT3 OT343 1850MHz) 2002/95/EC) 18dBm FPD6836SOT343 mx750 FPD6836SOT343E EB6836SOT343CE-BA transistor bc 564 bc 5578 0604HQ OT343 re 0603size bc 548 transistor S22m transistor BC 548 Data transistor Bc 540

    0402CS

    Abstract: FPD750SOT343 transistor 24 GHz
    Text: FPD750SOT343 FPD750SOT34 3 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT343 RoHS Compliant and Pb-Free Product Description The FPD750SOT343 is a packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a 0.25µmx750µm


    Original     		PDF FPD750SOT343 FPD750SOT34 OT343 FPD750SOT343 mx750 1850MHz) 20dBm 37dBm 2002/95/EC) 11kaged 0402CS transistor 24 GHz

    FPD6836SOT343E

    Abstract: 0604HQ FPD6836SOT343ESB FPD6836SOT343ESQ 0603 footprint IPC im 1117 atc x7r transistor bc 540
    Text: FPD6836SOT343E FPD6836SOT3 43ELow-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT NOT FOR NEW DESIGNS Package: SOT343 Features at 1850MHz     Optimum Technology Matching Applied  GaAs HBT RoHS-compliant (Directive


    Original     		PDF FPD6836SOT343E FPD6836SOT3 43ELow-Noise OT343 1850MHz) 2002/95/EC) 18dBm FPD6836SOT343E mx750 0604HQ FPD6836SOT343ESB FPD6836SOT343ESQ 0603 footprint IPC im 1117 atc x7r transistor bc 540

    FPD750SOT343

    Abstract: 0402CS 3.5GHz BJT
    Text: FPD750SOT343 FPD750SOT34 3 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT343 RoHS Compliant and Pb-Free Product Description The FPD750SOT343 is a packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a 0.25µmx750µm


    Original     		PDF FPD750SOT343 FPD750SOT34 OT343 FPD750SOT343 mx750 1850MHz) 20dBm 37dBm 2002/95/EC) EB750SOT343-BE 0402CS 3.5GHz BJT

    FPD750SOT343E

    Abstract: FPD750 FPD750SOT343 0402CS FPD750SOT343CE toko 1201
    Text: FPD750SOT343E FPD750SOT34 3E Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT NOT FOR NEW DESIGNS Package: SOT343 Features at 1850MHz     Optimum Technology Matching Applied  GaAs HBT RoHS-compliant (Directive


    Original     		PDF FPD750SOT343E FPD750SOT34 OT343 1850MHz) 2002/95/EC) 20dBm 37dBm FPD750SOT343CE mx750 FPD750SOT343E FPD750 FPD750SOT343 0402CS toko 1201

    FPD750

    Abstract: FPD750SOT343CE 3.5GHz BJT
    Text: FPD750SOT343CE FPD750SOT34 3CELow-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT NOT FOR NEW DESIGNS Package: SOT343 Features at 1850MHz     Optimum Technology Matching Applied  GaAs HBT RoHS-compliant (Directive


    Original     		PDF FPD750SOT34 FPD750SOT343CE OT343 FPD750SOT343CE mx750 1850MHz) 85GHz D750SOT343CECESR FPD750SOT343CECESQ FPD750SOT343CECESB FPD750 3.5GHz BJT

    2.4 ghz transistor wifi amplifier

    Abstract: Germanium power
    Text: BFU768F NPN wideband silicon germanium RF transistor Rev. 1.2 — 24 December 2012 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.


    Original     		PDF BFU768F OT343F JESD625-A 2.4 ghz transistor wifi amplifier Germanium power

    ATF-38143

    Abstract: A004R ATF-38143-TR1G
    Text: ATF-38143 Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package Data Sheet Description Features Avago Technologies’s ATF-38143 is a high dynamic range, low noise, PHEMT housed in a 4-lead SC-70 SOT343 surface mount plastic package. • Lead-free Option Available


    Original     		PDF ATF-38143 ATF-38143 SC-70 OT343) OT-343 OT343 SC-70) 5989-3745EN AV02-1443EN A004R ATF-38143-TR1G

    HBPF-0420

    Abstract: SOT343 C5 W04 transistor Transistor W06 transistor w04
    Text: 1800 to 1900 MHz Amplifiers using the HBFP-0405 and HBFP-0420 Low Noise Silicon Bipolar Transistors Application Note 1160 Introduction Hewlett-Packard’s HBFP-0405 and HBFP-0420 are high performance isolated collector silicon bipolar transistors housed in 4-lead SC-70 SOT343 surface mount plastic packages. Both the HBFP-0405 and HBFP-0420


    Original     		PDF HBFP-0405 HBFP-0420 SC-70 OT343) HBPF-0420 SOT343 C5 W04 transistor Transistor W06 transistor w04

    lambda alpha

    Abstract: ATF-38143
    Text: ATF-38143 Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package Data Sheet Description Features Avago Technologies’s ATF-38143 is a high dynamic range, low noise, PHEMT housed in a 4-lead SC-70 SOT343 surface mount plastic package. • Lead-free Option Available


    Original     		PDF ATF-38143 SC-70 OT343) OT-343 SC-70) 5989-3745EN AV02-1443EN lambda alpha

    BFU760F

    Abstract: bfu760 JESD625-A dielectric resonator oscillator germanium transistor table Germanium power
    Text: BFU760F NPN wideband silicon germanium RF transistor Rev. 1 — 29 April 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.


    Original     		PDF BFU760F OT343F JESD625-A BFU760F bfu760 dielectric resonator oscillator germanium transistor table Germanium power

    Untitled

    Abstract: No abstract text available
    Text: BFU760F NPN wideband silicon germanium RF transistor Rev. 1 — 29 April 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.


    Original     		PDF BFU760F OT343F JESD625-A

    BFU790F

    Abstract: JESD625-A Germanium power
    Text: BFU790F NPN wideband silicon germanium RF transistor Rev. 1 — 22 April 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.


    Original     		PDF BFU790F OT343F JESD625-A BFU790F Germanium power

    BFU725F

    Abstract: JESD625-A germanium rf transistor code marking s20 TRANSISTOR germanium transistor germanium transistors NPN SOT343F germanium transistor npn LNB ka band Germanium power
    Text: BFU725F NPN wideband silicon germanium RF transistor Rev. 01 — 6 December 2007 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.


    Original     		PDF BFU725F OT343F JESD625-A BFU725F germanium rf transistor code marking s20 TRANSISTOR germanium transistor germanium transistors NPN SOT343F germanium transistor npn LNB ka band Germanium power

    transistor marking N1

    Abstract: BFU725F JESD625-a LNB ka band 160 germanium transistor ka-band mixer DRO lnb germanium transistors NPN ka band lna nxp DC to microwave
    Text: BFU725F/N1 NPN wideband silicon germanium RF transistor Rev. 01 — 13 July 2009 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.


    Original     		PDF BFU725F/N1 OT343F JESD625-A BFU725F transistor marking N1 LNB ka band 160 germanium transistor ka-band mixer DRO lnb germanium transistors NPN ka band lna nxp DC to microwave

    DRO lnb

    Abstract: JESD625-A BFU630 BFU630F
    Text: BFU630F NPN wideband silicon RF transistor Rev. 1 — 15 December 2010 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. CAUTION


    Original     		PDF BFU630F OT343F JESD625-A DRO lnb BFU630 BFU630F

    Untitled

    Abstract: No abstract text available
    Text: BFU610F NPN wideband silicon RF transistor Rev. 2 — 11 January 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. CAUTION


    Original     		PDF BFU610F OT343F JESD625-A

    BFU610F

    Abstract: bfu6 NXP Bluetooth IC JESD625-A BFU610
    Text: BFU610F NPN wideband silicon RF transistor Rev. 2 — 11 January 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. CAUTION


    Original     		PDF BFU610F OT343F JESD625-A BFU610F bfu6 NXP Bluetooth IC BFU610

    BFU730F

    Abstract: JESD625-A 555 ic Germanium power
    Text: BFU730F NPN wideband silicon germanium RF transistor Rev. 1 — 29 April 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.


    Original     		PDF BFU730F OT343F JESD625-A BFU730F 555 ic Germanium power

    Untitled

    Abstract: No abstract text available
    Text: BFU710F NPN wideband silicon germanium RF transistor Rev. 1 — 20 April 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.


    Original     		PDF BFU710F OT343F JESD625-A