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    "MICRO X" TRANSISTOR Search Results

    "MICRO X" TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    "MICRO X" TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    XC6419

    Abstract: XBP-101 XC9257
    Text: Spring/Summer 2014 Power Management Solutions MICRO IN THIS ISSUE DC/DC WITH INTEG RATED COIL 1.5A, 5.5V CONSTANT ON TIME ONLY 2.5 x 3.2 x 1.0mm XC8107/08/09 XCL213/14 85m1 High Function Power Switch 1.5A, Hi-SAT-COT Step-Down Micro DC/DC Converter with Integrated Coil


    Original     		PDF XC8107/08/09 XCL213/14 XC9270/71 XCL211/12 XC9252 XCL101 XC9248 XC9306 XC9260/61 XC9131/35/36 XC6419 XBP-101 XC9257

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components Features x x x Capable of 0.625Watts of Power Dissipation. Collector-current 0.8A Collector-base Voltage :VCBO=50V BC337 , VCBO=30V(BC338) x Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 and MSL rating 1


    Original     		PDF BC337-16/25/40 BC338-16/25/40 625Watts BC337) BC338) 10mAdc, BC337 BC338

    2SC2149

    Abstract: 2SC2148 micro X
    Text: DATA SHEET SILICON TRANSISTORS 2SC2148, 2SC2149 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC2148, 2SC2149 are economical microwave transistors PACKAGE DIMENSIONS encapsulated into new hermetic stripline packages, "micro X".


    Original     		PDF 2SC2148, 2SC2149 2SC2149 2SC2148 micro X

    ne3511s02 s2p

    Abstract: NE3511S02-A NE3511S02 HS350 NE3511S02-T1C NE3511S02-T1C-A NE3511S02-T1D lnb ku-band nec microwave NE35
    Text: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3511S02 X TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.30 dB TYP., Ga = 13.5 dB TYP. @ f = 12 GHz • Micro-X plastic S02 package APPLICATIONS


    Original     		PDF NE3511S02 NE3511S02-T1C NE3511S02-T1C-A NE3511S02-T1D NE3511S02-T1D-A ne3511s02 s2p NE3511S02-A NE3511S02 HS350 NE3511S02-T1C NE3511S02-T1C-A NE3511S02-T1D lnb ku-band nec microwave NE35

    ne3511s02 s2p

    Abstract: NE3511S02 NE3511S02-T1D rt/duroid 5880 HS350 NE3511S02-T1C NE3511S02-T1C-A lnb ku-band rogers 5880
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3511S02 X TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.30 dB TYP., Ga = 13.5 dB TYP. @ f = 12 GHz • Micro-X plastic S02 package


    Original     		PDF NE3511S02 NE3511S02-T1C NE3511S02-T1C-A NE3511S02-T1D NE3511S02-T1D-A ne3511s02 s2p NE3511S02 NE3511S02-T1D rt/duroid 5880 HS350 NE3511S02-T1C NE3511S02-T1C-A lnb ku-band rogers 5880

    KDS 4.000 Crystal

    Abstract: KDS 4B 12 MHZ crystal KDS crystal 20.000
    Text: SH67L19A 4K 4-bit Micro-controller with LCD Driver Features SH6610C-Based Single-Chip 4-bit Micro-Controller With LCD Driver ROM: 4K X 16bits RAM: 303X 4bits - 47 System control register - 256 Data memory - 228 bits LCD RAM Operation voltage: 1.2V - 1.7V 24 CMOS Bi-directional I/O pads


    Original     		PDF SH67L19A SH6610C-Based 16bits 768kHz 32kHz 131kHz. 455kHz SEG10 SEG11 SEG12 KDS 4.000 Crystal KDS 4B 12 MHZ crystal KDS crystal 20.000

    D5-1-40174-1

    Abstract: pmm-bd pm driver 103H7522 pmm-bd-53130 PMM-MD-53031-10 PMM-MD-53030 103H8582 103H5505-70 PMM-MD-53030-10
    Text: Pulse I/F DC power input The 5-Phase Stepping Driver PMM-MD-53030-10 PMM-MD-53031-10 DC 24 V/36 V Micro-step (500 x 1 to 250 divisions) Applicable motors ø 60 ø 86 Characteristics Micro-step function available Smooth operation without vibration at low speeds can be realized.


    Original     		PDF PMM-MD-53030-10 PMM-MD-53031-10 250-division 103H7851-70 103H7852-70 103H7853-70 PMM-MA-50034 PMAPA1S6B01 D5-1-40174-1 pmm-bd pm driver 103H7522 pmm-bd-53130 PMM-MD-53031-10 PMM-MD-53030 103H8582 103H5505-70 PMM-MD-53030-10

    Untitled

    Abstract: No abstract text available
    Text: OBSOLETE - PLEASE USE ZXTP722MA ZXT4M322 MPPSTM Miniature Package Power Solutions 70V PNP LOW SATURATION TRANSISTOR SUMMARY PNP— VCEO= -70V; RSAT = 117m ; IC= -2.5A DESCRIPTION Packaged in the new innovative 2mm x 2mm MLP Micro Leaded Package outline,


    Original     		PDF ZXTP722MA ZXT4M322 MLP322

    Untitled

    Abstract: No abstract text available
    Text: Micro Family 72 V Input Actual size: 2.28 x 1.45 x 0.5 in 57,9 x 36,8 x 12,7 mm C S US C NRTL US DC-DC Converter Module Features Applications • DC input range: 43 – 110 V continuous • Isolated output • Encapsulated circuitry for shock and Railway/Transportation system applications including communications systems,


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Micro Family 24 V Input Actual size: 2.28 x 1.45 x 0.5 in 57,9 x 36,8 x 12,7 mm C S US C NRTL US DC-DC Converter Module Features Applications • DC input range: 18 - 36 V • Isolated output • Operation to 16 V at 75% power Industrial and process control, distributed power, medical, ATE, communications,


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Micro Family 72 V Input Actual size: 2.28 x 1.45 x 0.5 in 57,9 x 36,8 x 12,7 mm C S US C NRTL US DC-DC Converter Module Features Applications • DC input range: 43 – 110 V continuous • Isolated output • Encapsulated circuitry for shock and Railway/Transportation system applications including communications systems,


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Micro Family 72 V Input Actual size: 2.28 x 1.45 x 0.5 in 57,9 x 36,8 x 12,7 mm C S US C NRTL US DC-DC Converter Module Features Applications • DC input range: 43 – 110 V continuous • Isolated output • Encapsulated circuitry for shock and Railway/Transportation system applications including communications systems,


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Micro Family 110 V Input Actual size: 2.28 x 1.45 x 0.5 in 57,9 x 36,8 x 12,7 mm C S US C NRTL US DC-DC Converter Module Features Applications • DC input range: 66 – 154 V continuous • Isolated output • Encapsulated circuitry for shock and Railway/Transportation system applications including communications systems,


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Micro Family 110 V Input Actual size: 2.28 x 1.45 x 0.5 in 57,9 x 36,8 x 12,7 mm C S US C NRTL US DC-DC Converter Module Features Applications • DC input range: 66 – 154 V continuous • Isolated output • Encapsulated circuitry for shock and Railway/Transportation system applications including communications systems,


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: ADV MICRO MEMORY MfiE » • DS5752Ô GGBOflG11) Ô ■ AMD4 m i * A m Advanced Micro Devices 9 9 C 1 0 A 256 X 48 Content Addressable Memory DISTINCTIVE CHARACTERISTICS ■ 256word x 48-bit Content Addressable Memory (CAM) ■ - Optimized for Address Decoding in Local Area


    OCR Scan     		PDF DS5752Ã 256word 48-bit 48-blt 48-bit 08125-009B Am99ClOA 8125-012A 8125-011A

    AM28F256

    Abstract: No abstract text available
    Text: ADV MICRO MEMORY 4ÖE T> □2S7SEÖ GD30bSS 7 IAMD4 Preliminary Advanced Micro Devices Am28F256 32,768 x 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS High performance - 90 ns maximum access time Low power consumption - 30 mA maximum active current


    OCR Scan     		PDF GD30bSS Am28F256 32-pin -32-pin Am28F256-95C4JC Am28F256-95C3JC

    GXL-12F

    Abstract: GXL-12FT-P GXL-1 GXL-12FTI gxl-8fi gxl-8f
    Text: Micro size Installable anywhere and everywhere • New shape These are micro-sized, new-shaped sensors. • Low price with high accuracy The GXL series are the lowest price inductive sensors SU N X offers with performance as high as 0.02mm repeat accuracy.


    OCR Scan     		PDF SUS304) S-GXL12-1 CN-03 GXL-12F GXL-12FT-P GXL-1 GXL-12FTI gxl-8fi gxl-8f

    AMD a 462 socket pinout

    Abstract: No abstract text available
    Text: ADV MICRO MEMORY 38E Q 02s7saa 7 hamdm ggetöoq ¿Ü^PreOmlnarypllfc" r= 4 (,- ß - 2 l Am28F512 Advanced Micro Devices 65,536 x 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS • ■ High performance - 90 ns maximum access time Low power consum ption


    OCR Scan     		PDF 02s7saa Am28F512 32-pin T-90-10 AMD a 462 socket pinout

    28F010

    Abstract: AM28F010 AMD 478 socket pinout
    Text: AD V MICRO MEMORY 4ÖE » G2S7S5Û Preliminary 0030715 T •AMD4 a T—46—13—27 Advanced Micro Devices Am28F010 131,072 x 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS ■ ■ ■ High performance - 90 ns maximum access time Low power consumption


    OCR Scan     		PDF G030715 T-46-13-27 Am28F010 -32-Pin 32-Pin 100mA Am28F010-95C4JC Am28F010-95C3JC 28F010 AMD 478 socket pinout

    data programmers DIP PLCC

    Abstract: AMD 478 socket pinout
    Text: ADV MICRO MEMORY BÖE •.G2S?SSfl QGETÖBQ S ■ A M » 4 a Advanced Micro Devices Am28F010 131,072 x 8-Bit CMOS Flash Memoty DISTINCTIVE CHARACTERISTICS ■ High performance - 9 0 ns maximum access time ■ Latch-up protected to 100 mA from -1 V to Vcc+1 V


    OCR Scan     		PDF Am28F010 -32-P 32-Pin 02S752fl data programmers DIP PLCC AMD 478 socket pinout

    audi a3

    Abstract: No abstract text available
    Text: ADVANCED MICRO DEVICES S*ÌE D • 025752S ODMS'ìDa 0b7 ■ AUDI PRELIMINARY A m 2 7 L V 0 1 0 131,072 x 8-Bit CMOS Low Voltage, One Time Programmable Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS ■ ■ 3.3 V ± 0.3 V Vcc read operation High performance at 3.3 Vcc


    OCR Scan     		PDF 025752S Am27LV010 025752S 00H2117 6262A audi a3

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTORS 2 SC 2148 , 2 SC 2149 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC2148, 2SC2149 are econom ical microwave transistors PACKAGE DIMENSIONS encapsulated into new herm etic stripline packages, "micro X".


    OCR Scan     		PDF 2SC2148, 2SC2149 2SC2149. 2SC2149

    Untitled

    Abstract: No abstract text available
    Text: ADV MICRO {MEMORY} fli 0257528 ADV MICRO MEMORY D E § 0557520 0055515 1 89D f-4 6 -2 3 -0 8 üf 25595 Am27S07 64-Bit Noninverting-Output Bipolar RAM > 3 PO DISTINCTIVE CHARACTERISTICS • • • Fully decoded 16-word x 4-bit low power Schottky RAMs Internal ECL circuitry for optimum speed/power perfor­


    OCR Scan     		PDF Am27S07 64-Bit 16-word WF00121Ã 07318B

    Untitled

    Abstract: No abstract text available
    Text: JAN 1 g M ITSUBISHI MICROCOMPUTERS M 3 7471M 2-X X X F P ,M 37471M 4-X X X F P PRELIMINARY M 37471M 8-X X X F P S ING LE-CHIP 8-B IT CMOS MICRO CO M PUTER DISCRIPTION The M 37471M 2-XXXFP is a sin g le -c h ip m icro co m p ute r d e ­ PIN CONFIGURATION TOP VIEW


    OCR Scan     		PDF 7471M 37471M 56-pin 56P6N H-L0437-A KI-9102