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    "CLASS AB LINEAR" HF Search Results

    "CLASS AB LINEAR" HF Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation
    TCR3DM18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 300 mA, DFN4 Visit Toshiba Electronic Devices & Storage Corporation
    TCR3DG18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 300 mA, WCSP4E Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    "CLASS AB LINEAR" HF Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    100227

    Abstract: NEL2012F03-24 8614
    Text: NPN SILICON BIPOLAR L - BAND POWER TRANSISTOR NEL2012F03-24 OUTLINE DIMENSIONS Units in mm FEATURES • HIGH OUTPUT POWER: PACKAGE OUTLINE F03 5 W Class A, 16 W Class AB • USEABLE FROM 1.8 TO 2.0 GHz 2.8±0.2 • HIGH LINEAR GAIN: 13.5 dB Class A, 11.0 dB Class AB


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    PDF NEL2012F03-24 NEL2012F03-24 24-Hour 100227 8614

    2.2 uf 50v electrolytic

    Abstract: 1N4153 NEL2001 NEL200101-24
    Text: NPN SILICON BIPOLAR L-BAND POWER TRANSISTOR FEATURES NEL200101-24 OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: 0.7 W 2.0 W Class A Class AB PACKAGE OUTLINE 01 • LOW IM DISTORTION: -36 dBc @ 0.5 W PEP (Class A) -33 dBc @ 1.0 W PEP (Class AB) • HIGH LINEAR GAIN:


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    PDF NEL200101-24 NEL200101-24 24-Hour 2.2 uf 50v electrolytic 1N4153 NEL2001

    1N4153

    Abstract: NEL2001 NEL200101-24 2.2 uf 50v electrolytic
    Text: NPN SILICON BIPOLAR L-BAND POWER TRANSISTOR FEATURES NEL200101-24 OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: 0.7 W 2.0 W • LOW IM DISTORTION: Class A Class AB PACKAGE OUTLINE 01 -36 dBc @ 0.5 W PEP (Class A) -33 dBc @ 1.0 W PEP (Class AB) • HIGH LINEAR GAIN:


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    PDF NEL200101-24 NEL200101-24 24-Hour 1N4153 NEL2001 2.2 uf 50v electrolytic

    1450 transistor

    Abstract: 1350 transistor 1314AB60
    Text: R.1.A.052699-PHAN 1314AB60 60 Watts PEP, 25 Volts, Class AB Linear 1350 – 1400 MHz ADVANCED RELEASE GENERAL DESCRIPTION The 1314AB60 is a COMMON EMITTER transistor capable of providing 60 Watts of Class AB, RF output power over the band 1350-1400 MHz. This


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    PDF 052699-PHAN 1314AB60 1314AB60 250mA. 1450 transistor 1350 transistor

    PH0810-35

    Abstract: No abstract text available
    Text: PH0810-35 Wireless Bipolar Power Transistor 35W, 850-960MHz, 24V M/A-COM Products Released - Rev. 07.07 Outline Drawing1 Features • Designed for linear amplifier applications • Class AB: -30 dBc typ. 3rd IMD at 15 W PEP • Class AB: +53 dBc typ. 3rd order intercept point


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    PDF PH0810-35 850-960MHz, PH0810-35

    BUY60

    Abstract: MOTOROLA TRANSISTOR 736
    Text: MOTOROLA The RF Line MRF6414 NPN Silicon RF Power Transistor LIFETIME BUY The MRF6414 is designed for 26 volt UHF large signal, common emitter, class AB linear amplifier applications. • Specified 26 Volt, 960 MHz Characteristics Output Power = 50 Watts Minimum Gain = 8.5 dB @ 960 MHz, Class AB


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    PDF MRF6414/D MRF6414 BUY60 MOTOROLA TRANSISTOR 736

    s175-50

    Abstract: No abstract text available
    Text: S175 - 50 175 Watts, 50 Volts, Class AB Milcom 1.5 - 30 MHz CASE OUTLINE GENERAL DESCRIPTION 55HX, Style 2 The S175-50 is a 50 Volt, COMMN EMITTER device designed for Class A, AB or C operation in the HF/VHF frequency bands. Its high collector voltage simplifies the design of wideband, SSB linear amplifiers. The transistor chip is


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    PDF S175-50 S175-50

    1920CD60

    Abstract: 55SW
    Text: 1920CD60 60 Watts PEP, 25 Volts, Class AB CDMA Personal 1930 - 1990 MHz GENERAL DESCRIPTION CASE OUTLINE The 1920CD60 is a COMMON EMITTER transistor capable of providing 60 Watts of Class AB, RF PEP output power over the band 1930-1990 MHz. This transistor is specifically designed for LINEAR PERSONAL PCS


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    PDF 1920CD60 1920CD60 55SW

    indiana general

    Abstract: F624-19 F627 S175-50 F627-8 S-175 hf power amplifiers 2-30 mhz BYISTOR BYI-1 F625-9
    Text: S175 - 50 175 Watts, 50 Volts, Class AB Milcom 1.5 - 30 MHz GENERAL DESCRIPTION CASE OUTLINE The S175-50 is a 50 Volt, COMMN EMITTER device designed for Class A, AB or C operation in the HF/VHF frequency bands. Its high collector voltage simplifies the design of wideband, SSB linear amplifiers. The transistor chip is


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    PDF S175-50 5-240pF 75-480pF 2700pF F627-9, F625-9, F624-19, F627-8, indiana general F624-19 F627 F627-8 S-175 hf power amplifiers 2-30 mhz BYISTOR BYI-1 F625-9

    1920AB60

    Abstract: max6011
    Text: 1920AB60 60 Watts PEP, 25 Volts, Class AB Personal 1930 - 1990 MHz GENERAL DESCRIPTION CASE OUTLINE The 1920AB60 is a COMMON EMITTER transistor capable of providing 60 Watts of Class AB, RF PEP output power over the band 1930-1990 MHz. This transistor is specifically designed for LINEAR PERSONAL PCS


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    PDF 1920AB60 1920AB60 max6011

    1617AB15

    Abstract: BVces
    Text: 1617AB15 15 Watts PEP, 26 Volts, Class AB Linear 1600 - 1700 MHz GENERAL DESCRIPTION CASE OUTLINE The 1617AB15 is a COMMON EMITTER transistor capable of providing 15 Watts PEP of Class AB, RF output power over the band 1600 - 1700 MHz. This transistor is specifically designed for SATCOM BASE STATION


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    PDF 1617AB15 1617AB15 BVces

    1617AB5

    Abstract: GHz Technology
    Text: 1617AB5 5 Watts PEP, 26 Volts, Class AB Linear 1600 - 1700 MHz GENERAL DESCRIPTION CASE OUTLINE The 1617AB5 is a COMMON EMITTER transistor capable of providing 5 Watts PEP of Class AB, RF output power over the band 1626- 1660 MHz. This transistor is specifically designed for SATCOM BASE STATION


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    PDF 1617AB5 1617AB5 GHz Technology

    1819CD60

    Abstract: No abstract text available
    Text: 1819CD60 60 Watts PEP, 25 Volts, Class AB CDMA Personal 1805 - 1880 MHz GENERAL DESCRIPTION CASE OUTLINE The 1819CD60 is a COMMON EMITTER transistor capable of providing 60 Watts of Class AB, RF PEP output power over the band 1805-1880 MHz. This transistor is specifically designed for LINEAR PERSONAL PCN CDMA


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    PDF 1819CD60 1819CD60

    SD1489

    Abstract: airtronic ATC 100A
    Text: SD1489 RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS . . . . . . 470 - 860 MHz 28 VOLTS CLASS AB PUSH PULL DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY GOLD METALLIZATION DIFFUSED EMITTER BALLAST RESISTORS COMMON EMITTER CONFIGURATION


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    PDF SD1489 SD1489 airtronic ATC 100A

    SD1730

    Abstract: TH430 power transistors cross reference SD1224-10 SD1405 SD1407 HF TRANSISTORS SD1487 SD1726 SD1727
    Text: SILICON POWER TRANSISTORS HF TRANSISTORS Characterized for broadband amplifier operation, SGS-THOMSON 2-30 MHz devices provide high linear power output for a variety of military, commercial and amateur communication equipment. 2-30 MHz CLASS AB LINEAR, COMMON EMITTER, HF/SSB


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    PDF SD1405 SD1487 SD1224-10 SD1407 SD1729 SD1730 SD1411 SD1733 SD1726 SD1727 SD1730 TH430 power transistors cross reference SD1224-10 SD1405 SD1407 HF TRANSISTORS SD1487 SD1726 SD1727

    TH430 "cross reference"

    Abstract: "class AB Linear" HF TRANSISTORS class a linear hf C2075 SD1728 M177 SD1728
    Text: SILICON POWER TRANSISTORS HF TRANSISTORS Characterized for broadband amplifier operation, SGS-THOMSON 2-30 MHz devices provide high linear power output for a variety of military, commercial and amateur communication equipment. 2-30 MHz CLASS AB LINEAR, COMMON EMITTER, HF/SSB


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    PDF SD1285* SD1405* SD1487 SD1224-10* SD1407* SD1729 SD1730 SD1411 SD1733 SD1726 TH430 "cross reference" "class AB Linear" HF TRANSISTORS class a linear hf C2075 SD1728 M177 SD1728

    SD1456

    Abstract: push pull class AB RF linear TCC3100
    Text: SD1456 TCC3100 RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS . . . . . 170 - 230 MHz 28 VOLTS CLASS AB PUSH PULL DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY GOLD METALLIZATION DIFFUSED EMITTER BALLAST RESISTORS COMMON EMITTER CONFIGURATION


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    PDF SD1456 TCC3100) TCC3100 SD1456 push pull class AB RF linear TCC3100

    C 5478 transistor

    Abstract: No abstract text available
    Text: NPN SILICON BIPOLAR L - BAND POWER TRANSISTOR FEATURES OUTLINE DIMENSIONS NEL2004F02-24 Units in mm HIGH OUTPUT POWER: PACKAGE OUTLINE F02 1.5 W Class A, 7 W Class AB USEABLE FROM 1.5 TO 2.0 GHz (Input Pre-matched HIGH LINEAR GAIN: 12.0 dB Class A, 10.0 dB Class AB


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    PDF NEL2004F02-24 NEL2004F02-24isan th-19 24-Hour C 5478 transistor

    C 5478 transistor

    Abstract: 7807 transistor transistor 5478 TRANSISTOR c 5478 LARGE SIGNAL IMPEDANCES "class AB Linear"
    Text: NPN SILICON BIPOLAR L - BAND POWER TRANSISTOR FEATURES NEL2004F02-24 OUTLINE DIMENSIONS Units in mm HIGH OUTPUT POWER: 1.5 W Class A, 7 W Class AB PACKAGE OUTLINE F02 USEABLE FROM 1.5 TO 2.0 GHz (Input Pre-matched) HIGH LINEAR GAIN: 12.0 dB Class A, 10.0 dB Class AB


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    PDF NEL2004F02-24 NEL2004F02-24 C 5478 transistor 7807 transistor transistor 5478 TRANSISTOR c 5478 LARGE SIGNAL IMPEDANCES "class AB Linear"

    Untitled

    Abstract: No abstract text available
    Text: NPN SILICON BIPOLAR L - BAND POWER TRANSISTOR NEL2012F03-24 OUTLINE DIMENSIONS Units in mm FEATURES • HIGH OUTPUT POWER: PACKAGE OUTLINE F03 5 W Class A, 16 W Class AB • USEABLE FROM 1.8 TO 2.0 GHz 2.8±0.2 • HIGH LINEAR GAIN: 13.5 dB Class A, 11.0 dB Class AB


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    PDF NEL2012F03-24 NEL2012F03-24isan NEL2012F03-24 98B-0279 24-Hour

    Untitled

    Abstract: No abstract text available
    Text: NPN SILICON BIPOLAR L-BAND POWER TRANSISTOR FEATURES N E L 2 0 0 1 0 1 -2 4 OUTLINE DIMENSIONS Units in mm HIGH OUTPUT POWER: 0.7 W 2.0 W LOW IM DISTORTION Class A Class AB PACKAGE OUTLINE 01 -36 dBc @ 0.5 W PEP (Class A) -33 dBc 0 1.OW PEP (Class AB) HIGH LINEAR GAIN:


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    PDF NEL200101-24 NEL2001 1N4153

    EIMAC* 5CX1500A

    Abstract: 5CX1500A scans-048 DSAGER00032
    Text: 5CX1500A Power Pentode he Svetlana 5CX1500A is a highperformance ceram ic/m etal power pentode designed for use as a highly linear Class AB I linear amplifier. It may also be used as a high-gain Class C amplifier in HF radio frequency' industrial processing applications such as plasma


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    PDF 5CX1500A EIMAC* 5CX1500A scans-048 DSAGER00032

    "class AB Linear"

    Abstract: hf class AB power amplifier mosfet HF100-12 HF TRANSISTORS linear mosfet HF20-12F
    Text: RF Power Transistors HFSSB ASI HF transistors are characterized for broadband amplifier operation, 2-30MHz devices provide high linear power output for a variety of military, commercial and amateur communication equipment. 12.5 Volt, Class AB Linear BIAS P out


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    PDF 2-30MHz HF5-12F HF5-12S HF10-12F HF10-12S HF20-12F HF20-12S HF50-12F HF50-12S HFT150-28 "class AB Linear" hf class AB power amplifier mosfet HF100-12 HF TRANSISTORS linear mosfet

    Philips polystyrene capacitor

    Abstract: ferroxcube wideband hf choke PHILIPS 108 CAPACITOR PolyStyrene capacitor 79lc SOT121B Philips polystyrene capacitors 22 pf trimmer capacitor
    Text: Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-AB or class-B operated high power transmitters in the h.f. and v.h.f. bands. The transistor presents excellent performance as a linear


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    PDF OT121B. BLW76 MGP517 Philips polystyrene capacitor ferroxcube wideband hf choke PHILIPS 108 CAPACITOR PolyStyrene capacitor 79lc SOT121B Philips polystyrene capacitors 22 pf trimmer capacitor